K. È. Nikiruy, A. I. Ilyasov, A. V. Emelyanov, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin, “Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$”, Fizika Tverdogo Tela, 62:9 (2020), 1562–1565; Phys. Solid State, 62:9 (2020), 1732

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Fizika Tverdogo Tela, 2020, Volume 62, Issue 9, Pages 1562–1565
DOI: https://doi.org/10.21883/FTT.2020.09.49787.07H (Mi ftt8333)

This article is cited in 7 scientific papers (total in 7 papers)

XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10-13, 2020
Surface physics, thin films

Memristors based on nanoscale layers LiNbO

$_{3}$ and (Co

$_{40}$ Fe

$_{40}$ B

$_{20}$ )

$_{x}$ (LiNbO

$_{3}$ )

$_{100-x}$

K. È. Nikiruy, A. I. Ilyasov, A. V. Emelyanov, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin

National Research Centre "Kurchatov Institute", Moscow

Full-text PDF (160 kB) Citations (7)

DOI: https://doi.org/10.21883/FTT.2020.09.49787.07H

Abstract: The memristive properties of layered capacitor structures based on a (Co

$_{40}$ Fe

$_{40}$ B

$_{20}$ )

$_{x}$ (LiNbO

$_{3}$ )

$_{100-x}$ nanocomposite and LiNbO

$_{3}$ with thicknesses of 10 and 40 nm, respectively, are studied. There was a sharp transition from a single-filament to multi-filament resistive switching mechanism observed for the first time which appeared with an increase in an amount of the metal phase in the nanocomposite; this mechanism is explained within a model proposed previously.

Keywords: memristor, resistive switching effect, metal oxide nanocomposite.

Funding agency	Grant number
Russian Science Foundation	18-79-10253
This work was financially supported by the Russian Science Foundation (no. 18-79-10253) on the equipment of the Resource Center at the “Kurchatov Institute” Research Center.

Received: 26.03.2020
Revised: 26.03.2020
Accepted: 02.04.2020

English version:
Physics of the Solid State, 2020, Volume 62, Issue 9, Pages 1732–1735
DOI: https://doi.org/10.1134/S1063783420090218

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: K. È. Nikiruy, A. I. Ilyasov, A. V. Emelyanov, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin, “Memristors based on nanoscale layers LiNbO

$_{3}$ and (Co

$_{40}$ Fe

$_{40}$ B

$_{20}$ )

$_{x}$ (LiNbO

$_{3}$ )

$_{100-x}$ ”, Fizika Tverdogo Tela, 62:9 (2020), 1562–1565; Phys. Solid State, 62:9 (2020), 1732–1735

Citation in format AMSBIB

\Bibitem{NikIlyEme20}

\by K.~\`E.~Nikiruy, A.~I.~Ilyasov, A.~V.~Emelyanov, A.~V.~Sitnikov, V.~V.~Ryl'kov, V.~A.~Demin

\paper Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$

\jour Fizika Tverdogo Tela

\yr 2020

\vol 62

\issue 9

\pages 1562--1565

\mathnet{http://mi.mathnet.ru/ftt8333}

\crossref{https://doi.org/10.21883/FTT.2020.09.49787.07H}

\elib{https://elibrary.ru/item.asp?id=44154246}

\transl

\jour Phys. Solid State

\yr 2020

\vol 62

\issue 9

\pages 1732--1735

\crossref{https://doi.org/10.1134/S1063783420090218}

Linking options:

https://www.mathnet.ru/eng/ftt8333

https://www.mathnet.ru/eng/ftt/v62/i9/p1562

This publication is cited in the following 7 articles:

I. A. Surazhevskii, V. V. Rylkov, V. A. Demin, “Kompaktnaya povedencheskaya model nanokompozitnogo memristora”, Radiotekhnika i elektronika, 68:11 (2023), 1140
Victor Erokhin, Reference Module in Materials Science and Materials Engineering, 2023
Evelina P. Domashevskaya, Sergey A. Ivkov, Pavel V. Seredin, Dmitry L. Goloshchapov, Konstantin A. Barkov, Stanislav V. Ryabtsev, Yrii G. Segal, Alexander V. Sitnikov, Elena A. Ganshina, “Nonlinear Electromagnetic Properties of Thinfilm Nanocomposites (CoFeZr)x(MgF2)100-x”, Magnetochemistry, 9:6 (2023), 160
I. A. Surazhevsky, V. V. Rylkov, V. A. Demin, “Compact Behavioral Model of a Nanocomposit Memristor”, J. Commun. Technol. Electron., 68:11 (2023), 1365
M. N. Koryazhkina, D. O. Filatov, S. V. Tikhov, A. I. Belov, D. S. Korolev, A. V. Kruglov, R. N. Kryukov, S. Yu. Zubkov, V. A. Vorontsov, D. A. Pavlov, D. I. Tetelbaum, A. N. Mikhaylov, S. Kim, “Electrical Properties of Silicon-Nitride-Based Memristors on Silicon-on-Insulator Substrate”, Nanotechnol Russia, 17:6 (2022), 866
Maria N. Koryazhkina, Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry S. Korolev, Alexander V. Kruglov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, David I. Tetelbaum, Alexey N. Mikhaylov, Sergey A. Shchanikov, Sungjun Kim, Bernardo Spagnolo, “Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments”, JLPEA, 12:1 (2022), 14
M. N. Koryazhkina, D. O. Filatov, S. V. Tikhov, A. I. Belov, D. S. Korolev, A. V. Kruglov, R. N. Kryukov, S. Yu. Zubkov, V. A. Vorontsov, D. A. Pavlov, D. I. Tetelbaum, A. N. Mikhaylov, S. Kim, “Electrical Properties of Silicon-Oxide-Based Memristors on Silicon-on-Insulator Substrates”, Nanotechnol Russia, 16:6 (2021), 745

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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