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Fizika Tverdogo Tela, 2020, Volume 62, Issue 9, Pages 1562–1565
DOI: https://doi.org/10.21883/FTT.2020.09.49787.07H (Mi ftt8333) 		 
This article is cited in 7 scientific papers (total in 7 papers)

XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10-13, 2020
Surface physics, thin films

Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$

K. È. Nikiruy, A. I. Ilyasov, A. V. Emelyanov, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin

National Research Centre "Kurchatov Institute", Moscow
Full-text PDF (160 kB) Citations (7)
DOI: https://doi.org/10.21883/FTT.2020.09.49787.07H
Abstract: The memristive properties of layered capacitor structures based on a (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ nanocomposite and LiNbO$_{3}$ with thicknesses of 10 and 40 nm, respectively, are studied. There was a sharp transition from a single-filament to multi-filament resistive switching mechanism observed for the first time which appeared with an increase in an amount of the metal phase in the nanocomposite; this mechanism is explained within a model proposed previously.
Keywords: memristor, resistive switching effect, metal oxide nanocomposite.
Funding agency Grant number
Russian Science Foundation 18-79-10253
This work was financially supported by the Russian Science Foundation (no. 18-79-10253) on the equipment of the Resource Center at the “Kurchatov Institute” Research Center.
Received: 26.03.2020
Revised: 26.03.2020
Accepted: 02.04.2020
English version:
Physics of the Solid State, 2020, Volume 62, Issue 9, Pages 1732–1735
DOI: https://doi.org/10.1134/S1063783420090218
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. È. Nikiruy, A. I. Ilyasov, A. V. Emelyanov, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin, “Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$”, Fizika Tverdogo Tela, 62:9 (2020), 1562–1565; Phys. Solid State, 62:9 (2020), 1732–1735
Citation in format AMSBIB
\Bibitem{NikIlyEme20}
\by K.~\`E.~Nikiruy, A.~I.~Ilyasov, A.~V.~Emelyanov, A.~V.~Sitnikov, V.~V.~Ryl'kov, V.~A.~Demin
\paper Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 9
\pages 1562--1565
\mathnet{http://mi.mathnet.ru/ftt8333}
\crossref{https://doi.org/10.21883/FTT.2020.09.49787.07H}
\elib{https://elibrary.ru/item.asp?id=44154246}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 9
\pages 1732--1735
\crossref{https://doi.org/10.1134/S1063783420090218}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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