Abstract:
The memristive properties of layered capacitor structures based on a (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ nanocomposite and LiNbO$_{3}$ with thicknesses of 10 and 40 nm, respectively, are studied. There was a sharp transition from a single-filament to multi-filament resistive switching mechanism observed for the first time which appeared with an increase in an amount of the metal phase in the nanocomposite; this mechanism is explained within a model proposed previously.
Keywords:
memristor, resistive switching effect, metal oxide nanocomposite.
This work was financially supported by the Russian Science Foundation (no. 18-79-10253) on the equipment of the Resource Center at the “Kurchatov Institute” Research Center.
Citation:
K. È. Nikiruy, A. I. Ilyasov, A. V. Emelyanov, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin, “Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$”, Fizika Tverdogo Tela, 62:9 (2020), 1562–1565; Phys. Solid State, 62:9 (2020), 1732–1735