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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 21, Pages 40–43
DOI: https://doi.org/10.21883/PJTF.2019.21.48473.17974 (Mi pjtf5281) 		 
This article is cited in 12 scientific papers (total in 12 papers)

Poly-para-xylylene-based memristors on flexible substrates

B. S. Shvetsovab, A. N. Matsukatovaab, A. A. Minnekhanovb, A. A. Nesmelovb, B. V. Goncharovb, D. A. Lapkinb, M. N. Martyshova, P. A. Forshbc, V. V. Ryl'kovbd, V. A. Deminb, A. V. Emelyanovbc

a Lomonosov Moscow State University
b National Research Centre "Kurchatov Institute", Moscow
c Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies, Moscow Institute of Physics and Technology, Moscow, Russia
d Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Full-text PDF (267 kB) Citations (12)
DOI: https://doi.org/10.21883/PJTF.2019.21.48473.17974
Abstract: Flexible memristive structures based on poly-para-xylelene layers, which exhibit stable resistive switchings and are resistant to bendings with radii up to 10 mm, have been prepared and studied. A two-step scheme of setting the resistive state of the memristive structure is proposed, which is based on monitoring the compliance current passing through the structure. The results obtained allow memristive structures based on poly-para-xylelene layers to be used for neuromorphic computational systems and biocompatible “wearable” electronics.
Keywords: memristor, organic electronics, poly-para-xylelene, flexible structures.
Received: 11.07.2019
Revised: 11.07.2019
Accepted: 17.07.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 11, Pages 1103–1106
DOI: https://doi.org/10.1134/S1063785019110130
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. S. Shvetsov, A. N. Matsukatova, A. A. Minnekhanov, A. A. Nesmelov, B. V. Goncharov, D. A. Lapkin, M. N. Martyshov, P. A. Forsh, V. V. Ryl'kov, V. A. Demin, A. V. Emelyanov, “Poly-para-xylylene-based memristors on flexible substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 40–43; Tech. Phys. Lett., 45:11 (2019), 1103–1106
Citation in format AMSBIB
\Bibitem{ShvMatMin19}
\by B.~S.~Shvetsov, A.~N.~Matsukatova, A.~A.~Minnekhanov, A.~A.~Nesmelov, B.~V.~Goncharov, D.~A.~Lapkin, M.~N.~Martyshov, P.~A.~Forsh, V.~V.~Ryl'kov, V.~A.~Demin, A.~V.~Emelyanov
\paper Poly-para-xylylene-based memristors on flexible substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 21
\pages 40--43
\mathnet{http://mi.mathnet.ru/pjtf5281}
\crossref{https://doi.org/10.21883/PJTF.2019.21.48473.17974}
\elib{https://elibrary.ru/item.asp?id=41848466}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 11
\pages 1103--1106
\crossref{https://doi.org/10.1134/S1063785019110130}
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    • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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