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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. V. Ishchenko, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, A. E. Klimov, A. B. Loginov, B. A. Loginov, N. S. Pschin, A. S. Tarasov, E. V. Fedosenko, V. N. Sherstyakova, “Topology of PbSnTe:In layers versus indium concentration”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 1040–1044   ; Tech. Phys., 66:7 (2021), 878–882  |
| 2. |
D. V. Dmitriev, D. A. Kolosovsky, E. V. Fedosenko, A. I. Toropov, K. S. Zhuravlev, “Substitution of phosphorus at the InP(001) surface upon annealing in an arsenic flux”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 877–881 ; Semiconductors, 55:11 (2021), 823–837 |
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| 3. |
A. S. Tarasov, N. N. Mikhailov, S. A. Dvoretskii, R. V. Menshchikov, I. N. Uzhakov, A. S. Kozhukhov, E. V. Fedosenko, O. E. Tereshchenko, “Preparation atomically clean and structurally ordered surfaces of epitaxial CdTe films for subsequent epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 748–753 ; Semiconductors, 55 (2021), s62–s66 |
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2020 |
| 4. |
A. N. Akimov, I. O. Akhundov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestnyi, N. S. Pschin, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, E. V. Fedosenko, V. N. Sherstyakova, “Sign-alternating photoconductivity in PbSnTe : In films in the space-charge-limited current regime”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 796–800 ; Semiconductors, 54:8 (2020), 951–955 |
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2019 |
| 5. |
A. S. Tarasov, D. V. Ishchenko, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, A. E. Klimov, N. S. Pschin, S. P. Suprun, E. V. Fedosenko, V. N. Sherstyakova, O. E. Tereshchenko, “Modification of the surface properties of PbSnTe$\langle$In$\rangle$ epitaxial layers with composition near band inversion”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1795–1799 ; Tech. Phys., 64:11 (2019), 1704–1708 |
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2018 |
| 6. |
V. G. Mansurov, Yu. G. Galitsyn, T. V. Malin, S. A. Teys, E. V. Fedosenko, A. S. Kozhukhov, K. S. Zhuravlev, Ildikó Cora, Béla Pécz, “Formation of a graphene-like SiN layer on the surface Si(111)”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1407–1413 ; Semiconductors, 52:12 (2018), 1511–1517 |
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2017 |
| 7. |
A. N. Akimov, A. E. Klimov, N. S. Pschin, A. S. Yaroshevich, M. L. Savchenko, V. S. Epov, E. V. Fedosenko, “Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1574–1578 ; Semiconductors, 51:11 (2017), 1522–1526 |
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2009 |
| 8. |
S. P. Suprun, E. V. Fedosenko, “Formation of the GaAs-Ge heterointerface in the presence of oxide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 94–97 ; JETP Letters, 89:2 (2009), 84–87  |
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