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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 9, Pages 748–753
DOI: https://doi.org/10.21883/FTP.2021.09.51289.18 (Mi phts4977) 		 
This article is cited in 5 scientific papers (total in 5 papers)

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Preparation atomically clean and structurally ordered surfaces of epitaxial CdTe films for subsequent epitaxy

A. S. Tarasova, N. N. Mikhailovab, S. A. Dvoretskiiac, R. V. Menshchikova, I. N. Uzhakova, A. S. Kozhukhova, E. V. Fedosenkoa, O. E. Tereshchenkoab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Tomsk State University
Full-text PDF (956 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2021.09.51289.18
Abstract: An atomically clean and structurally ordered surface of the CdTe layer of a (013)-oriented GaAs/ZnTe/CdTe substrate after storage in air is obtained by treatment in isopropyl alcohol saturated with hydrochloric-acid vapors, with subsequent thermal annealing in ultrahigh vacuum. It is shown that chemical treatment of the CdTe surface results in the removal of native oxides and in enrichment of the surface with an elemental Te layer. During heating in vacuum, two stages of change in the state of the surface (at $\sim$ 125 and $\le$ 250$^\circ$C) are observed. At the temperature $T>$ 250$^\circ$C, elemental tellurium is desorbed, and a Te-stabilized (1$\times$1) CdTe(013) structure is formed.
Keywords: surface, GaAs substrate, HgCdTe, PbSnTe, XPS, RHEED, single wave ellipsometry, chemical preparation.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-20053
20-42-543015
20-32-90154
Russian Science Foundation 18-72-10063
The part of the study concerned with the MBE growth of CdHgTe HESs and the ellipsometry measurements was supported by the Russian Foundation for Basic Research, project no. 18-29-20053. The part of the study concerned with the growth of PbSnTe films was supported by the Russian Foundation for Basic Research, project no. 20-32-90154. The part of the study concerned with the XPS measurements was supported by the Russian Foundation for Basic Research and Novosibirsk region, project no. 20-42-543015. The part of the study concerned with the AFM measurements was supported by the Russian Science Foundation, project no. 18-72-10063.
Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Pages s62–s66
DOI: https://doi.org/10.1134/S1063782621090220
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Tarasov, N. N. Mikhailov, S. A. Dvoretskii, R. V. Menshchikov, I. N. Uzhakov, A. S. Kozhukhov, E. V. Fedosenko, O. E. Tereshchenko, “Preparation atomically clean and structurally ordered surfaces of epitaxial CdTe films for subsequent epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 748–753; Semiconductors, 55 (2021), s62–s66
Citation in format AMSBIB
\Bibitem{TarMikDvo21}
\by A.~S.~Tarasov, N.~N.~Mikhailov, S.~A.~Dvoretskii, R.~V.~Menshchikov, I.~N.~Uzhakov, A.~S.~Kozhukhov, E.~V.~Fedosenko, O.~E.~Tereshchenko
\paper Preparation atomically clean and structurally ordered surfaces of epitaxial CdTe films for subsequent epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 9
\pages 748--753
\mathnet{http://mi.mathnet.ru/phts4977}
\crossref{https://doi.org/10.21883/FTP.2021.09.51289.18}
\elib{https://elibrary.ru/item.asp?id=46491079}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\pages s62--s66
\crossref{https://doi.org/10.1134/S1063782621090220}
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