Formation of the GaAs-Ge heterointerface in the presence of oxide

The data of the X-ray photoelectron spectroscopy and reflection high-energy electron diffraction studies of the formation of the GaAs-Ge heterointerface under incomplete removal of all oxide phases from the GaAs substrate surface are presented. It is shown that the combination of the processes of final Ga₂O desorption and Ge deposition allows one to avoid the evaporation of As and the stoichiometry distortion near the interface.