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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil地ikova, K. E. Kudryavtsev, A. V. Novikov, P. A. Yunin, M. A. Kalinnikov, E. V. Skorokhodov, M. V. Shaleev, Z. F. Krasil'nik, “Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 766–772   |
| 2. |
N. V. Gaponenko, Yu. D. Kornilava, E. I. Lashkovskaya, V. D. Zhivulko, A. V. Mudryi, Yu. V. Radyush, B. A. Andreev, M. V. Stepikhova, A. N. Yablonskii, S. A. Gusev, R. Subasri, D. S. Reddy, “Radiative properties of up-conversion coatings formed on the basis of erbium-doped barium titanate xerogels”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 713–718 ; Semiconductors, 55:9 (2021), 735–740 |
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2020 |
| 3. |
O. M. Sreseli, N. A. Bert, V. N. Nevedomskiy, A. I. Lihachev, I. N. Yassievich, A. V. Ershov, A. V. Nezhdanov, A. I. Mashin, B. A. Andreev, A. N. Yablonskii, “Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 129–137 ; Semiconductors, 54:2 (2020), 181–189 |
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2019 |
| 4. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil地ikova, P. A. Bushuikin, A. N. Yablonskii, A. V. Novikov, V. Yu. Davydov, P. A. Yunin, M. I. Kalinnikov, E. V. Skorokhodov, Z. F. Krasil'nik, “Emission properties of heavily doped epitaxial indium-nitride layers”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1395–1400 ; Semiconductors, 53:10 (2019), 1357–1362 |
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| 5. |
A. V. Novikov, D. V. Yurasov, N. A. Baidakova, P. A. Bushuikin, B. A. Andreev, P. A. Yunin, M. N. Drozdov, A. N. Yablonskii, M. A. Kalinnikov, Z. F. Krasil'nik, “Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1354–1359 ; Semiconductors, 53:10 (2019), 1318–1323 |
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2017 |
| 6. |
P. A. Bushuikin, A. V. Novikov, B. A. Andreev, D. N. Lobanov, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil地ikova, E. V. Demidov, G. M. Savchenko, V. Yu. Davydov, “Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1594–1598 ; Semiconductors, 51:12 (2017), 1537–1541 |
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2016 |
| 7. |
D. N. Lobanov, A. V. Novikov, B. A. Andreev, P. A. Bushuikin, P. A. Yunin, E. V. Skorokhodov, L. V. Krasil地ikova, “Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 264–268 ; Semiconductors, 50:2 (2016), 261–265 |
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2014 |
| 8. |
K. E. Kudryavtsev, D. I. Kryzhkov, L. V. Krasil地ikova, D. V. Shengurov, V. B. Shmagin, B. A. Andreev, Z. F. Krasil'nik, “Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 913–918 ; JETP Letters, 100:12 (2014), 807–811   |
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2009 |
| 9. |
B. A. Andreev, A. A. Ezhevskii, N. V. Abrosimov, P. G. Sennikov, H. Pol, “Dependence of the energy of the resonance states of an acceptor in silicon on the host isotopic mass”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:6 (2009), 501–504 ; JETP Letters, 90:6 (2009), 455–458 |
| 10. |
P. G. Sennikov, S. V. Golubev, V. I. Shashkin, D. A. Pryakhin, M. N. Drozdov, B. A. Andreev, Yu. N. Drozdov, A. S. Kuznetsov, H. Pol, “Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 80–83 ; JETP Letters, 89:2 (2009), 73–75 |
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