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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, I. A. Aleksandrov, N. V. Rzheutskii, E. V. Lebiadok, A. A. Razumets, K. S. Zhuravlev, “Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface”, Fizika Tverdogo Tela, 61:12 (2019), 2327–2332   ; Phys. Solid State, 61:12 (2019), 2329–2334 |
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T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24 ; Tech. Phys. Lett., 45:8 (2019), 761–764 |
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2016 |
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I. A. Aleksandrov, V. G. Mansurov, K. S. Zhuravlev, “Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1059–1063 ; Semiconductors, 50:8 (2016), 1038–1042 |
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I. A. Aleksandrov, K. S. Zhuravlev, V. G. Mansurov, “Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 191–194 ; Semiconductors, 50:2 (2016), 191–194 |
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2010 |
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I. A. Aleksandrov, K. S. Zhuravlev, V. G. Mansurov, P. Holtz, “Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010), 498–500 ; JETP Letters, 91:9 (2010), 452–454   |
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