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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 191–194
(Mi phts6536)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
I. A. Aleksandrova, K. S. Zhuravlevb, V. G. Mansurova a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract:
The influence of defects in the AlN barrier on photoluminescence decay after pulse excitation is studied for structures with GaN quantum dots in an AlN matrix. For these quantum-dot structures, it is found that the initial part of the decay curves corresponds to fast photoluminescence decay. Comparison of the photoluminescence-decay curves for the GaN/AlN quantum-dot structures and AlN layers without quantum dots shows that fast decay is defined by the contribution of the photoluminescence band related to defects in the AlN matrix.
Keywords:
Sapphire Substrate, Pulse Energy Density, Beam Equivalent Pressure, Excitation Photon Energy, Photoluminescence Kinetic.
Received: 12.05.2015 Accepted: 18.05.2015
Citation:
I. A. Aleksandrov, K. S. Zhuravlev, V. G. Mansurov, “Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 191–194; Semiconductors, 50:2 (2016), 191–194
Linking options:
https://www.mathnet.ru/eng/phts6536 https://www.mathnet.ru/eng/phts/v50/i2/p191
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