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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 91, Issue 9, Pages 498–500
(Mi jetpl708)
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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots
I. A. Aleksandrova, K. S. Zhuravleva, V. G. Mansurova, P. Holtzb a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS
b Linkoping University, S-581 83 Linkoping, Sweden
Abstract:
Microphotoluminescence from GaN/AlN quantum dots grown by molecular beam epitaxy on sapphire substrates along the (0001) axis has been studied. To produce quantum dots of different average sizes and densities, the nominal amount of deposited GaN has been varied from 1 to 4 ML. The density of the quantum dots was about 1011 cm−2, which corresponded to about 103 quantum dots excited in the experiments. The photo-luminescence from the quantum dots was linearly polarized and the maximum polarization degree (15%) has been observed for the sample with the lowest amount of deposited GaN. The photoluminescence intensity from this sample under continuous laser excitation decreased by more than two orders of magnitude for about 30 min and then stabilized. The photoluminescence intensity from other samples under continuous excitation remained constant. We suggest that a rather high polarization degree is caused by anisotropy in the strain and shape of the quantum dots formed near the dislocations, which also act as the centers of nonradiative recombination.
Received: 04.03.2010
Citation:
I. A. Aleksandrov, K. S. Zhuravlev, V. G. Mansurov, P. Holtz, “Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:9 (2010), 498–500; JETP Letters, 91:9 (2010), 452–454
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https://www.mathnet.ru/eng/jetpl708 https://www.mathnet.ru/eng/jetpl/v91/i9/p498
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Abstract page: | 254 | Full-text PDF : | 88 | References: | 45 |
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