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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
D. M. Kazantsev, V. L. Alperovich, V. A. Tkachenko, Z. D. Kvon, “Spectral maximum in the terahertz photoconductance of a quantum point contact”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:2 (2022), 116–122  ; JETP Letters, 116:2 (2022), 117–122 |
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2018 |
| 2. |
D. M. Kazantsev, I. O. Akhundov, V. L. Alperovich, N. L. Shwartz, A. S. Kozhukhov, A. V. Latyshev, “Thermal smoothing and roughening of GaAs surfaces: experiment and Monte Carlo simulation”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 514  ; Semiconductors, 52:5 (2018), 618–621 |
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2017 |
| 3. |
A. G. Zhuravlev, V. S. Khoroshilov, V. L. Alperovich, “Electron emission from Cs/GaAs and GaAs(Cs,Î) with positive and negative electron affinity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:10 (2017), 645–650 ; JETP Letters, 105:10 (2017), 686–690   |
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2013 |
| 4. |
A. G. Zhuravlev, M. L. Savchenko, A. G. Paulish, V. L. Alperovich, “Photoemission from $p$-GaAs(001) with nonequilibrium cesium overlayer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:8 (2013), 513–517 ; JETP Letters, 98:8 (2013), 455–459 |
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2010 |
| 5. |
A. G. Zhuravlev, K. V. Toropetskiy, P. A. Polovodov, V. L. Alperovich, “Atomic reconstructions and electronic states on the GaAs(001) surface with the adsorbed Sb and Cs layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:5 (2010), 351–356 ; JETP Letters, 92:5 (2010), 315–320 |
1
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2008 |
| 6. |
A. G. Zhuravlev, V. L. Alperovich, “Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:9 (2008), 702–706 ; JETP Letters, 88:9 (2009), 611–615 |
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| 7. |
O. E. Tereshchenko, K. V. Toropetskiy, V. L. Alperovich, “Reversible superstructural transitions on the GaAs(001) surface under the selective effect of iodine and cesium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:1 (2008), 41–44 ; JETP Letters, 87:1 (2008), 35–38 |
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2006 |
| 8. |
D. A. Orlov, V. L. Alperovich, A. S. Terekhov, “Spin-dependent photoemission induced by a jump in the electron <i>g</i>-factor at the <i>p</i>-GaAs(Cs,O)-vacuum interface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:10 (2006), 525–529 ; JETP Letters, 83:10 (2006), 453–457 |
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2004 |
| 9. |
O. E. Tereshchenko, V. L. Alperovich, A. S. Terekhov, “Decrease in the bond energy of arsenic atoms on the GaAs(100)-(2$\times$4)/c(2$\times$8) surface due to the effect of adsorbed cesium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:3 (2004), 163–167 ; JETP Letters, 79:3 (2004), 131–135 |
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1990 |
| 10. |
V. L. Alperovich, A. O. Minaev, N. S. Rudaya, A. S. Terekhov, “Photoelectron pulse relaxation on $\mathrm{GaAs}$ surface in the magneto-induced polarization-dependent photoconductivity effect”, Fizika Tverdogo Tela, 32:7 (1990), 2152–2154 |
| 11. |
V. L. Alperovich, A. O. Minaev, S. P. Moshchenko, A. S. Terekhov, “Polarization dependence of the excitonic photoemf at the gallium arsenide–metal interface”, Fizika Tverdogo Tela, 32:3 (1990), 950–952 |
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1988 |
| 12. |
V. L. Alperovich, V. I. Belinicher, A. O. Minaev, S. P. Moshchenko, A. S. Terekhov, “Ballistic photogalvanic effect in interband transitions in $\mathrm{GaAs}$”, Fizika Tverdogo Tela, 30:10 (1988), 3111–3117 |
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1984 |
| 13. |
V. L. Alperovich, S. P. Moshchenko, A. S. Terekhov, “Photoelectron thermalization on $\mathrm{GaAs}$-metal interface. Effect in photo-emf spectra”, Fizika Tverdogo Tela, 26:12 (1984), 3532–3536 |
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1983 |
| 14. |
V. L. Alperovich, S. P. Moshchenko, A. S. Terekhov, “Magnetic field effect on ballistic photocurrents”, Fizika Tverdogo Tela, 25:9 (1983), 2780–2782 |
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