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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 88, Issue 9, Pages 702–706
(Mi jetpl277)
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This article is cited in 5 scientific papers (total in 5 papers)
CONDENSED MATTER
Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface
A. G. Zhuravlevab, V. L. Alperovichab a Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia
b Novosibirsk State University, Novosibirsk, 630090, Russia
Abstract:
A nonmonotonic behavior of band bending φ S as a function of cesium coverage ϑ on the Cs/GaAs(001) surface is observed in the form of several maxima and minima. This behavior indicates the formation of the quasi-discrete spectrum of the adatom-induced electronic surface states. The hysteresis of the φ S (ϑ) dependence under adsorption and subsequent thermodesorption of cesium indicates the metastability of the Cs/GaAs(001) system.
Received: 18.09.2008
Citation:
A. G. Zhuravlev, V. L. Alperovich, “Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:9 (2008), 702–706; JETP Letters, 88:9 (2009), 611–615
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https://www.mathnet.ru/eng/jetpl277 https://www.mathnet.ru/eng/jetpl/v88/i9/p702
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Abstract page: | 216 | Full-text PDF : | 81 | References: | 42 |
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