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This article is cited in 10 scientific papers (total in 10 papers)
OPTICS AND NUCLEAR PHYSICS
Photoemission from $p$-GaAs(001) with nonequilibrium cesium overlayer
A. G. Zhuravlevab, M. L. Savchenkoba, A. G. Paulishab, V. L. Alperovichba a Novosibirsk State University
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
The dependences of the photoemission current and effective electron affinity on the submonolayer cesium coverage at the adsorption of Cs on a GaAs(001) surface, as well as the kinetics of the photocurrent and affinity after the termination of Cs deposition, which is caused by the relaxation of the structure of a nonequilibrium adsorption layer, have been experimentally studied. The revealed features in the dependence of the photocurrent on the Cs coverage are attributed to a nonmonotonic behavior of the surface band bending in the Cs/GaAs(001) system. It has been established that a relaxation decrease in the photocurrent in the case of coverages smaller than half a monolayer is due to the relaxation of the band bending, whereas an increase in the photocurrent at larger coverages is caused by the relaxation of the electron affinity.
Received: 22.08.2013
Citation:
A. G. Zhuravlev, M. L. Savchenko, A. G. Paulish, V. L. Alperovich, “Photoemission from $p$-GaAs(001) with nonequilibrium cesium overlayer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:8 (2013), 513–517; JETP Letters, 98:8 (2013), 455–459
Linking options:
https://www.mathnet.ru/eng/jetpl3546 https://www.mathnet.ru/eng/jetpl/v98/i8/p513
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Abstract page: | 195 | Full-text PDF : | 62 | References: | 34 | First page: | 7 |
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