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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2006, Volume 83, Issue 10, Pages 525–529
(Mi jetpl1310)
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This article is cited in 3 scientific papers (total in 3 papers)
CONDENSED MATTER
Spin-dependent photoemission induced by a jump in the electron g-factor at the p-GaAs(Cs,O)-vacuum interface
D. A. Orlovab, V. L. Alperovichca, A. S. Terekhovca a Institute of Semiconductor Physics of SB RAS
b Max-Planck-Institut für Kernphysik, D-69117 Heidelberg, Germany
c Novosibirsk State University
Abstract:
It has been found experimentally that the probability of emitting electrons from p-GaAs(Cs,O) to vacuum in the presence of a magnetic field depends on the sign of the circular polarization of exciting light. The main cause of this effect is the jump in the electron g-factor at the semiconductor-vacuum interface (from g* = −0.44 in GaAs to g 0 = 2 in vacuum). Owing to the jump in the electron g-factor, the effective electron affinity depends on the mutual orientation of optically oriented electrons and the magnetic field and this dependence results in the spin-dependent photoemission.
Received: 04.04.2006
Citation:
D. A. Orlov, V. L. Alperovich, A. S. Terekhov, “Spin-dependent photoemission induced by a jump in the electron g-factor at the p-GaAs(Cs,O)-vacuum interface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:10 (2006), 525–529; JETP Letters, 83:10 (2006), 453–457
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https://www.mathnet.ru/eng/jetpl1310 https://www.mathnet.ru/eng/jetpl/v83/i10/p525
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Abstract page: | 195 | Full-text PDF : | 81 | References: | 49 |
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