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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2017, Volume 105, Issue 10, Pages 645–650
DOI: https://doi.org/10.7868/S0370274X17100137 (Mi jetpl5278) 		 
This article is cited in 13 scientific papers (total in 13 papers)

MISCELLANEOUS

Electron emission from Cs/GaAs and GaAs(Cs,О) with positive and negative electron affinity

A. G. Zhuravlevab, V. S. Khoroshilovab, V. L. Alperovichab

a Novosibirsk State University, Novosibirsk, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Full-text PDF (297 kB) Citations (13)
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DOI: https://doi.org/10.7868/S0370274X17100137
Abstract: The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.
Funding agency Grant number
Russian Foundation for Basic Research 17-02-00815_а
Received: 30.03.2017
English version:
Journal of Experimental and Theoretical Physics Letters, 2017, Volume 105, Issue 10, Pages 686–690
DOI: https://doi.org/10.1134/S0021364017100149
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Zhuravlev, V. S. Khoroshilov, V. L. Alperovich, “Electron emission from Cs/GaAs and GaAs(Cs,О) with positive and negative electron affinity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:10 (2017), 645–650; JETP Letters, 105:10 (2017), 686–690
Citation in format AMSBIB
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    • This publication is cited in the following 13 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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