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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
D. M. Legan, O. P. Pchelyakov, V. V. Preobrazhenskii, “Optimization of the In$_{0.3}$Ga$_{0.7}$As-layer thickness in a triple-junction In$_{0.3}$Ga$_{0.7}$As/GaAs/In$_{0.5}$Ga$_{0.5}$P solar cell”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 65–68   ; Semiconductors, 54:1 (2020), 108–111 |
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2018 |
| 2. |
M. Yu. Yesin, A. I. Nikiforov, V. A. Timofeev, A. R. Tuktamyshev, V. I. Mashanov, I. D. Loshkarev, A. S. Deryabin, O. P. Pchelyakov, “Formation of a stepped Si(100) surface and its effect on the growth of Ge islands”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 409–413 ; Semiconductors, 52:3 (2018), 390–393 |
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2016 |
| 3. |
A. S. Parshin, A. Yu. Igumenov, Yu. L. Mikhlin, O. P. Pchelyakov, V. S. Zhigalov, “Comparative analysis of characteristic electron energy loss spectra and inelastic scattering cross-section spectra of Fe”, Fizika Tverdogo Tela, 58:5 (2016), 881–887 ; Phys. Solid State, 58:5 (2016), 908–914 |
5
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| 4. |
A. S. Parshin, A. Yu. Igumenov, Yu. L. Mikhlin, O. P. Pchelyakov, V. S. Zhigalov, “Electron spectroscopy of iron disilicide”, Zhurnal Tekhnicheskoi Fiziki, 86:9 (2016), 136–140 ; Tech. Phys., 61:9 (2016), 1418–1422 |
4
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| 5. |
A. S. Parshin, S. A. Kushchenkov, O. P. Pchelyakov, Yu. L. Mikhlin, “Layer-by-layer analysis of the thickness distribution of silicon dioxide in the structure SiO$_{2}$/Si(111) by inelastic electron scattering cross-section spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 344–349 ; Semiconductors, 50:3 (2016), 339–344 |
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2008 |
| 6. |
Yu. B. Bolkhovityanov, O. P. Pchelyakov, “GaAs epitaxy on Si substrates: modern status of research and engineering”, UFN, 178:5 (2008), 459–480 ; Phys. Usp., 51:5 (2008), 437–456   |
252
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2005 |
| 7. |
D. V. Gritsenko, S. S. Shaimeev, M. A. Lamin, O. P. Pchelyakov, V. A. Gritsenko, V. G. Lifshits, “Two-band conductivity of ZrO<sub>2</sub> synthesized by molecular beam epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:11 (2005), 721–723 ; JETP Letters, 81:11 (2005), 587–589 |
11
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| 8. |
D. A. Orekhov, V. A. Volodin, M. D. Efremov, A. I. Nikiforov, V. V. Ul'yanov, O. P. Pchelyakov, “Phonon localization in Ge nanoislands and its manifestation in Raman spectra”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:7 (2005), 415–418 ; JETP Letters, 81:7 (2005), 331–334 |
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| 9. |
A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, A. G. Rodrigues, J. C. Galzerani, D. R. T. Zahn, “Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:1 (2005), 33–36 ; JETP Letters, 81:1 (2005), 30–33 |
15
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2001 |
| 10. |
A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, Sh. Shul'tse, D. R. T. Tsan, “Phonons in Ge/Si superlattices with Ge quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001), 521–525 ; JETP Letters, 73:9 (2001), 461–464 |
15
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| 11. |
Yu. B. Bolkhovityanov, O. P. Pchelyakov, S. I. Chikichev, “Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures”, UFN, 171:7 (2001), 689–715 ; Phys. Usp., 44:7 (2001), 655–680 |
64
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2000 |
| 12. |
O. P. Pchelyakov, “Molecular beam epitaxy: equipment, devices, technology”, UFN, 170:9 (2000), 993–995 ; Phys. Usp., 43:9 (2000), 923–925 |
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1992 |
| 13. |
Yu. A. Pusep, M. P. Sinyukov, A. B. Talochkin, M. Kardona, V. A. Markov, O. P. Pchelyakov, “Phonon spectra of strained $\mathrm{Si}/(\mathrm{Si}:\mathrm{Ge})(111)$ superlattices”, Fizika Tverdogo Tela, 34:4 (1992), 1125–1133 |
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1991 |
| 14. |
A. B. Talochkin, V. A. Markov, I. G. Neizvestnyi, O. P. Pchelyakov, M. P. Sinyukov, S. I. Stenin, “Quantization of optical phonon spectrum in $\mathrm{Si}$–$\mathrm{Si}_{0.5}\mathrm{Ge}_{0.5}$ superlattices”, Fizika Tverdogo Tela, 33:6 (1991), 1695–1698 |
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