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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 1, Pages 33–36 (Mi jetpl1791)  

This article is cited in 15 scientific papers (total in 15 papers)

CONDENSED MATTER

Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots

A. G. Milekhina, A. I. Nikiforova, O. P. Pchelyakova, A. G. Rodriguesb, J. C. Galzeranib, D. R. T. Zahnc

a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Departamento de Fisica, Universidade Federal de Sao Carlos, C.P. 676, Sao Carlos, SP, Brasil
c Institut für Physik, Technische Universität Chemnitz, D 09107 Chemniz, Germany
References:
Abstract: The resonant Raman scattering in GeSi/Si structures with GeSi quantum dots has been analyzed. These structures were formed at various temperatures in the process of molecular-beam epitaxy. It has been shown that Raman scattering spectra recorded near resonances with the $E_0$ and $E_1$ electronic transitions exhibit the lines of Ge optical phonons whose frequencies differ significantly from the corresponding values in bulk germanium. In the structures grown at low temperatures ($300\div 400^\circ$C), the phonon frequency decreases with increasing excitation energy. This behavior is attributed to Raman scattering, which is sensitive to the size of quantum dots, and shows that quantum dots are inhomogeneous in size. In the structures grown at a higher temperature ($500^\circ$C), the opposite dependence of the frequency of Ge phonons on excitation energy is observed. This behavior is attributed to the competitive effect of internal mechanical stresses in quantum dots, the localization of optical photons, and the mixing of Ge and Si atoms in structures with a bimodal size distribution of quantum dots.
Received: 29.11.2004
English version:
Journal of Experimental and Theoretical Physics Letters, 2005, Volume 81, Issue 1, Pages 30–33
DOI: https://doi.org/10.1134/1.1881731
Bibliographic databases:
Document Type: Article
PACS: 63.22.+m, 78.67.Hc, 78.30.Am
Language: Russian
Citation: A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, A. G. Rodrigues, J. C. Galzerani, D. R. T. Zahn, “Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:1 (2005), 33–36; JETP Letters, 81:1 (2005), 30–33
Citation in format AMSBIB
\Bibitem{MilNikPch05}
\by A.~G.~Milekhin, A.~I.~Nikiforov, O.~P.~Pchelyakov, A.~G.~Rodrigues, J.~C.~Galzerani, D.~R.~T.~Zahn
\paper Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2005
\vol 81
\issue 1
\pages 33--36
\mathnet{http://mi.mathnet.ru/jetpl1791}
\transl
\jour JETP Letters
\yr 2005
\vol 81
\issue 1
\pages 30--33
\crossref{https://doi.org/10.1134/1.1881731}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000227784200007}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-17544382336}
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  • This publication is cited in the following 15 articles:
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