|
Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2001, Volume 73, Issue 9, Pages 521–525
(Mi jetpl4384)
|
|
|
|
This article is cited in 15 scientific papers (total in 15 papers)
CONDENSED MATTER
Phonons in Ge/Si superlattices with Ge quantum dots
A. G. Milekhina, A. I. Nikiforova, O. P. Pchelyakova, Sh. Shul'tseb, D. R. T. Tsanb a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Institut für Physik, Technische Universität Chemnitz
Abstract:
Ge/Si superlattices containing Ge quantum dots were prepared by molecular beam epitaxy and studied by resonant Raman scattering. It is shown that these structures possess vibrational properties of both two-and zero-dimensional objects. The folded acoustic phonons observed in the low-frequency region of the spectrum (up to 15th order) are typical for planar superlattices. The acoustic phonon lines overlap with a broad emission continuum that is due to the violation of the wave-vector conservation law by the quantum dots. An analysis of the Ge and Ge-Si optical phonons indicates that the Ge quantum dots are pseudoamorphous and that mixing of the Ge and Si atoms is insignificant. The longitudinal optical phonons undergo a low-frequency shift upon increasing laser excitation energy ($2.54$–$2.71$ eV) because of the confinement effect in small-sized quantum dots, which dominate resonant Raman scattering.
Received: 07.03.2001 Revised: 20.03.2001
Citation:
A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, Sh. Shul'tse, D. R. T. Tsan, “Phonons in Ge/Si superlattices with Ge quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001), 521–525; JETP Letters, 73:9 (2001), 461–464
Linking options:
https://www.mathnet.ru/eng/jetpl4384 https://www.mathnet.ru/eng/jetpl/v73/i9/p521
|
Statistics & downloads: |
Abstract page: | 142 | Full-text PDF : | 64 | References: | 1 |
|