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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
M. N. Solovan, G. O. Andrushchak, A. I. Mostovyi, T. T. Kovaliuk, V. V. Brus, P. D. Mar'yanchuk, “Graphite/$p$-SiC Schottky diodes prepared by transferring drawn graphite films onto SiC”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 248–253   ; Semiconductors, 52:2 (2018), 236–241 |
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2017 |
| 2. |
M. N. Solovan, A. I. Mostovyi, S. V. Bilichuk, F. Pinna, T. T. Kovaliuk, V. V. Brus, E. V. Maistruk, I. G. Orletskii, P. D. Mar'yanchuk, “Structural and optical properties of Cu$_{2}$ZnSn(S,Se)$_{4}$ films obtained by magnetron sputtering of a Cu$_{2}$ZnSn alloy target”, Fizika Tverdogo Tela, 59:8 (2017), 1619–1623 ; Phys. Solid State, 59:8 (2017), 1643–1647 |
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| 3. |
M. M. Solovan, V. V. Brus, A. I. Mostovyi, P. D. Mar'yanchuk, I. G. Orletskyi, T. T. Kovaliuk, S. L. Abashin, “Silicon nanowire array architecture for heterojunction electronics”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 569 ; Semiconductors, 51:4 (2017), 542–548 |
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2016 |
| 4. |
I. G. Orletskii, P. D. Mar'yanchuk, M. N. Solovan, V. V. Brus, E. V. Maistruk, D. P. Kozyarskii, S. L. Abashin, “Optical properties and mechanisms of current flow in Cu$_{2}$ZnSnS$_{4}$ films prepared by spray pyrolysis”, Fizika Tverdogo Tela, 58:5 (2016), 1024–1029 ; Phys. Solid State, 58:5 (2016), 1058–1064 |
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| 5. |
I. G. Orletskii, P. D. Mar'yanchuk, E. V. Maistruk, M. N. Solovan, V. V. Brus, “Low-temperature spray-pyrolysis of FeS$_2$ films and their electrical and optical properties”, Fizika Tverdogo Tela, 58:1 (2016), 39–43 ; Phys. Solid State, 58:1 (2016), 37–41 |
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| 6. |
M. N. Solovan, A. I. Mostovyi, V. V. Brus, E. V. Maistruk, P. D. Mar'yanchuk, “Electrical and photoelectric properties of $n$-ŅiN/$p$-Hg$_{3}$In$_{2}$Te$_{6}$ heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1041–1046 ; Semiconductors, 50:8 (2016), 1020–1024 |
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| 7. |
I. G. Orletskii, M. I. Ilashschuk, V. V. Brus, P. D. Mar'yanchuk, M. M. Solovan, Z. D. Kovalyuk, “Electrical and photoelectric properties of the TiN/$p$-InSe heterojunction”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 339–343 ; Semiconductors, 50:3 (2016), 334–338 |
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