Electrical and photoelectric properties of $n$-ТiN/$p$-Hg$_{3}$In$_{2}$Te$_{6}$ heterostructures

$n$-ТiN/$p$-Hg$_{3}$In$_{2}$Te$_{6}$ heterostructures are fabricated by depositing a thin $n$-type titanium nitride (TiN) film onto prepared $p$-type Hg$_{3}$In$_{2}$Te$_{6}$ plates using reactive magnetron sputtering. Their electrical and photoelectric properties are studied. Dominant charge-transport mechanisms under forward bias are analyzed within tunneling-recombination and tunneling models. The fabricated $n$-ТiN/$p$-Hg$_{3}$In$_{2}$Te$_{6}$ structures have the following photoelectric parameters at an illumination intensity of 80 mW/cm$^2$: the open-circuit voltage is $V_{\operatorname{OC}}$ = 0.52 V, the short-circuit current is $I_{\operatorname{SC}}$ = 0.265 mA/cm2, and the fill factor is $FF$ = 0.39.