Silicon nanowire array architecture for heterojunction electronics

Photosensitive nanostructured heterojunctions $n$-TiN/$p$-Si were fabricated by means of titanium nitride thin films deposition ($n$-type conductivity) by the DC reactive magnetron sputtering onto nanostructured single crystal substrates of $p$-type Si (100).
The temperature dependencies of the height of the potential barrier and series resistance of the $n$-TiN/$p$-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias.
The heterojunctions under investigation generate open-circuit voltage $V_{oc}$ = 0.8 V, short-circuit current $I_{sc}$ = 3.72 mA/cm$^2$ and fill factor $FF$ = 0.5 under illumination of 100 mW/сm$^2$.