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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3, Pages 339–343
(Mi phts6513)
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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Electrical and photoelectric properties of the TiN/$p$-InSe heterojunction
I. G. Orletskii, M. I. Ilashschuk, V. V. Brus, P. D. Mar'yanchuk, M. M. Solovan, Z. D. Kovalyuk Chernivtsi National University named after Yuriy Fedkovych
Abstract:
The conditions for fabricating photosensitive TiN/$p$-InSe heterojunctions by the reactive-magnetron sputtering of thin titanium-nitride films onto freshly cleaved $p$-InSe single-crystal substrates is investigated. The presence of a tunnel-transparent high-resistivity In$_{2}$Se$_{3}$ layer at the heterojunction is revealed from analysis of the I–V characteristics, and the effect of this layer on the electrical properties and photosensitivity spectra of the heterostructures is analyzed. The dominant current transport mechanisms through the TiN/$p$-InSe energy barrier under forward and reverse bias are determined.
Keywords:
Versus Characteristic, Reverse Bias, Spectral Dependence, Energy Diagram, Photoelectric Property.
Received: 13.07.2015 Accepted: 09.09.2015
Citation:
I. G. Orletskii, M. I. Ilashschuk, V. V. Brus, P. D. Mar'yanchuk, M. M. Solovan, Z. D. Kovalyuk, “Electrical and photoelectric properties of the TiN/$p$-InSe heterojunction”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 339–343; Semiconductors, 50:3 (2016), 334–338
Linking options:
https://www.mathnet.ru/eng/phts6513 https://www.mathnet.ru/eng/phts/v50/i3/p339
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