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Karaseov, Platon Aleksandrovich

Statistics Math-Net.Ru
Total publications: 6
Scientific articles: 6

Number of views:
This page:55
Abstract pages:257
Full texts:90
Associate professor
Doctor of physico-mathematical sciences

https://www.mathnet.ru/eng/person186344
List of publications on Google Scholar
List of publications on ZentralBlatt

Publications in Math-Net.Ru Citations
2020
1. M. S. Tuzhilkin, P. G. Bespalova, M. V. Mishin, I. E. Kolesnikov, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Formation of Au nanoparticles and features of etching of a Si substrate under irradiation with atomic and molecular ions”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  90–96  mathnet  elib; Semiconductors, 54:1 (2020), 137–143 6
2019
2. A. I. Titov, K. V. Karabeshkin, P. A. Karaseov, A. I. Struchkov, “Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1455–1458  mathnet  elib; Semiconductors, 53:11 (2019), 1415–1418 7
2018
3. V. V. Kozlovsky, A. È. Vasil'ev, P. A. Karaseov, A. A. Lebedev, “Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  327–332  mathnet  elib; Semiconductors, 52:3 (2018), 310–315 4
2017
4. E. N. Shubina, P. A. Karaseov, A. I. Titov, O. A. Podsvirov, A. Ya. Vinogradov, N. N. Karasev, A. V. Pozdnyakov, “The effect of diborane additive on the plasma-chemical properties of deposited carbon films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  80–88  mathnet  elib; Tech. Phys. Lett., 43:1 (2017), 81–84 6
5. N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Dislocation-related photoluminescence in silicon implanted with fluorine ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  14–20  mathnet  elib; Tech. Phys. Lett., 43:1 (2017), 50–52 4
2016
6. K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1009–1015  mathnet  elib; Semiconductors, 50:8 (2016), 989–995 6

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