Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 11, Pages 1455–1458
DOI: https://doi.org/10.21883/FTP.2019.11.48439.9145 (Mi phts5348) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?

A. I. Titov, K. V. Karabeshkin, P. A. Karaseov, A. I. Struchkov

Peter the Great St. Petersburg Polytechnic University
Full-text PDF (424 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2019.11.48439.9145
Abstract: The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.
Keywords: GaN, ion irradiation, defect engineering, damage formation, chemical effects.
Funding agency Grant number
Russian Foundation for Basic Research 18-08-01213
This study was supported by the Russian Foundation for Basic Research, project no. 18-08-01213.
Received: 22.04.2019
Revised: 28.04.2019
Accepted: 28.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 11, Pages 1415–1418
DOI: https://doi.org/10.1134/S1063782619110204
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Titov, K. V. Karabeshkin, P. A. Karaseov, A. I. Struchkov, “Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1455–1458; Semiconductors, 53:11 (2019), 1415–1418
Citation in format AMSBIB
\Bibitem{TitKarKar19}
\by A.~I.~Titov, K.~V.~Karabeshkin, P.~A.~Karaseov, A.~I.~Struchkov
\paper Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 11
\pages 1455--1458
\mathnet{http://mi.mathnet.ru/phts5348}
\crossref{https://doi.org/10.21883/FTP.2019.11.48439.9145}
\elib{https://elibrary.ru/item.asp?id=41300642}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 11
\pages 1415--1418
\crossref{https://doi.org/10.1134/S1063782619110204}
Linking options:
  • https://www.mathnet.ru/eng/phts5348
  • https://www.mathnet.ru/eng/phts/v53/i11/p1455
    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:49
    Full-text PDF :20
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024