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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
B. E. Umirzakov, D. A. Tashmukhamedova, S. T. Gulyamova, G. Kh. Allayarova, “Effect of the Ba$^+$ ion implantation on the composition and electronic properties of MoO$_{3}$/Mo (111) films”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 831–834   ; Tech. Phys., 65:5 (2020), 795–798 |
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| 2. |
D. A. Tashmukhamedova, M. B. Yusupjanova, G. Kh. Allayarova, B. E. Umirzakov, “Crystal structure and band gap of nanoscale phases of Si formed at various depths of the near-surface region of SiO$_{2}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 32–34 ; Tech. Phys. Lett., 46:10 (2020), 972–975 |
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2019 |
| 3. |
B. E. Umirzakov, D. A. Tashmukhamedova, M. A. Tursunov, Y. S. Ergashov, G. Kh. Allayarova, “Escape depth of secondary and photoelectrons from CdTe films with a Ba film”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1115–1117 ; Tech. Phys., 64:7 (2019), 1051–1054 |
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| 4. |
B. E. Umirzakov, D. A. Tashmukhamedova, G. Kh. Allayarova, J. Sh. Sodikjanov, “The effect of the formation of silicides on the resistivity of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019), 49–51 ; Tech. Phys. Lett., 45:4 (2019), 356–358 |
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