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Publications in Math-Net.Ru |
Citations |
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2022 |
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L. I. Goray, T. N. Berezovskaya, D. V. Mokhov, V. A. Sharov, K. Yu. Shubina, E. V. Pirogov, A. S. Dashkov, A. V. Nashchekin, M. V. Zorina, M. M. Barysheva, S. A. Garakhin, S. Yu. Zuev, N. I. Chkhalo, “Fabrication and testing of Au- and multilayer Mo/Si-coated diffraction gratings with high-order brilliance in high orders in the soft X-ray and EUV ranges”, Kvantovaya Elektronika, 52:10 (2022), 955–962  [Bull. Lebedev Physics Institute, 50:suppl. 2 (2023), S250–S261] |
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2021 |
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L. I. Goray, T. N. Berezovskaya, D. V. Mokhov, V. A. Sharov, K. Yu. Shubina, E. V. Pirogov, A. S. Dashkov, “Blazed diffraction gratings on Si – first results”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1538–1547  |
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2019 |
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A. M. Mizerov, S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, S. N. Timoshnev, K. Yu. Shubina, T. N. Berezovskaya, D. V. Mokhov, A. D. Bouravlev, “Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 61:12 (2019), 2289–2293 ; Phys. Solid State, 61:12 (2019), 2277–2281 |
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D. V. Mokhov, T. N. Berezovskaya, E. V. Nikitina, K. Yu. Shubina, A. M. Mizerov, A. D. Bouravlev, “The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1726–1732 ; Semiconductors, 53:12 (2019), 1717–1723 |
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A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, M. S. Sobolev, K. Yu. Shubin, T. N. Berezovskaya, D. V. Mokhov, V. V. Lundin, A. E. Nikolaev, A. D. Bouravlev, “On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1212–1217 ; Semiconductors, 53:9 (2019), 1187–1191 |
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2018 |
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A. M. Mizerov, S. N. Timoshnev, M. S. Sobolev, E. V. Nikitina, K. Yu. Shubina, T. N. Berezovskaya, I. V. Shtrom, A. D. Bouravlev, “Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1425–1429 ; Semiconductors, 52:12 (2018), 1529–1533 |
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2017 |
| 7. |
K. Yu. Shubina, T. N. Berezovskaya, D. V. Mokhov, A. M. Mizerov, E. V. Nikitina, “The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017), 47–54 ; Tech. Phys. Lett., 43:11 (2017), 976–978 |
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D. V. Mokhov, T. N. Berezovskaya, A. G. Kuz'menkov, N. A. Maleev, S. N. Timoshnev, V. M. Ustinov, “Precision calibration of the silicon doping level in gallium arsenide epitaxial layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 87–94 ; Tech. Phys. Lett., 43:10 (2017), 909–911 |
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| 9. |
E. V. Nikitina, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, T. N. Berezovskaya, “The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 97–102 ; Tech. Phys. Lett., 43:9 (2017), 863–865 |
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