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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
L. I. Goray, T. N. Berezovskaya, D. V. Mokhov, V. A. Sharov, K. Yu. Shubina, E. V. Pirogov, A. S. Dashkov, A. V. Nashchekin, M. V. Zorina, M. M. Barysheva, S. A. Garakhin, S. Yu. Zuev, N. I. Chkhalo, “Fabrication and testing of Au- and multilayer Mo/Si-coated diffraction gratings with high-order brilliance in high orders in the soft X-ray and EUV ranges”, Kvantovaya Elektronika, 52:10 (2022), 955–962  [Bull. Lebedev Physics Institute, 50:suppl. 2 (2023), S250–S261] |
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2021 |
| 2. |
L. I. Goray, T. N. Berezovskaya, D. V. Mokhov, V. A. Sharov, K. Yu. Shubina, E. V. Pirogov, A. S. Dashkov, “Blazed diffraction gratings on Si – first results”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1538–1547  |
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| 3. |
A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov, M. S. Sobolev, “Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1077–1080 |
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L. I. Goray, E. V. Pirogov, M. V. Svechnikov, M. S. Sobolev, N. K. Polyakov, L. G. Gerchikov, E. V. Nikitina, A. S. Dashkov, M. M. Borisov, S. N. Yakunin, A. D. Bouravlev, “High-precision characterization of super-multiperiod AlGaAs/GaAs superlattices using X-ray reflectometry on a synchrotron source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 7–10 ; Tech. Phys. Lett., 47:10 (2021), 757–760 |
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2020 |
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L. I. Goray, E. V. Pirogov, M. S. Sobolev, N. K. Polyakov, A. S. Dashkov, M. V. Svechnikov, A. D. Bouravlev, “Deep X-ray reflectometry of supermultiperiod A$_3$B$_5$ structures with quantum wells grown by molecular-beam epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1906–1912 ; Tech. Phys., 65:11 (2020), 1822–1827 |
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2017 |
| 6. |
E. V. Nikitina, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, T. N. Berezovskaya, “The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 97–102 ; Tech. Phys. Lett., 43:9 (2017), 863–865 |
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2016 |
| 7. |
E. V. Nikitina, A. S. Gudovskikh, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, K. S. Zelentsov, I. A. Morozov, A. Yu. Egorov, “GaAs/InGaAsN heterostructures for multi-junction solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 663–667 ; Semiconductors, 50:5 (2016), 652–655 |
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| 8. |
A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov, “The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016), 14–19 ; Tech. Phys. Lett., 42:3 (2016), 284–286 |
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