|
This article is cited in 7 scientific papers (total in 7 papers)
XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10--13, 2020
Physical electronics
Deep X-ray reflectometry of supermultiperiod A$_3$B$_5$ structures with quantum wells grown by molecular-beam epitaxy
L. I. Gorayabc, E. V. Pirogovad, M. S. Soboleva, N. K. Polyakova, A. S. Dashkova, M. V. Svechnikove, A. D. Bouravlevaf a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d Connector Optics LLC, St. Petersburg
e Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
f Ioffe Institute, St. Petersburg
Abstract:
Elastically strained supermultiperiod (100–1000 periods) AlGaAs/GaAs superlattices with different doping levels and slightly differing period thicknesses have been investigated. The proposed technique of characterization consisting of combined application of deep X-ray reflectometry based on a rigorous calculation method, as well as the well-known method of high-resolution X-ray reflectometry, has made it possible to investigate 100-period structures with 2-nm-wide Al$_{0.3}$Ga$_{0.7}$As barriers and 10-nm-wide GaAs wells and determine with a high accuracy the layer thicknesses and spread of interfaces. This achievement can be considered as a first step in further analysis of thick structures using bright synchrotron radiation source. The difference between the expected and obtained by the proposed method layer thicknesses is several percent, including that for samples with a high doping level (up to 10$^{18}$ cm$^{-3}$). All supermultiperiod structures are characterized by sharp interfaces with a standard deviation of about 0.1 nm. Based on the obtained data on the thicknesses, one can accurately determine the layer compositions using high-resolution X-ray diffraction.
Keywords:
superlattice, AlGaAs heterostructure, X-ray reflectometry, rigorous electromagnetic scattering theory.
Received: 02.04.2020 Revised: 02.04.2020 Accepted: 02.04.2020
Citation:
L. I. Goray, E. V. Pirogov, M. S. Sobolev, N. K. Polyakov, A. S. Dashkov, M. V. Svechnikov, A. D. Bouravlev, “Deep X-ray reflectometry of supermultiperiod A$_3$B$_5$ structures with quantum wells grown by molecular-beam epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1906–1912; Tech. Phys., 65:11 (2020), 1822–1827
Linking options:
https://www.mathnet.ru/eng/jtf5160 https://www.mathnet.ru/eng/jtf/v90/i11/p1906
|
Statistics & downloads: |
Abstract page: | 44 | Full-text PDF : | 51 |
|