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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
R. V. Levin, A. S. Vlasov, B. V. Pushnii, “Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 932–936   ; Semiconductors, 55:11 (2021), 850–854 |
| 2. |
A. E. Marichev, V. S. Epoletov, A. S. Vlasov, B. V. Pushnii, A. I. Lihachev, A. V. Nashchekin, “Replacing tunnel junctions in InP with conduction channels with GaP crystallites”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021), 52–54 |
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2020 |
| 3. |
R. V. Levin, I. V. Fedorov, A. S. Vlasov, P. N. Brunkov, B. V. Pushnii, “Smoothing the surface of gallium antimonide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 48–50 ; Tech. Phys. Lett., 46:12 (2020), 1203–1205 |
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2019 |
| 4. |
L. B. Karlina, A. S. Vlasov, M. Z. Shvarts, I. P. Soshnikov, I. P. Smirnova, F. E. Komissarenko, A. V. Ankudinov, “Ga(In)AsP lateral nanostructures as the optical component of GaAs-based photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1714–1717 ; Semiconductors, 53:12 (2019), 1705–1708 |
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| 5. |
R. V. Levin, A. S. Vlasov, A. N. Smirnov, B. V. Pushnii, “High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1599–1603 ; Semiconductors, 53:12 (2019), 1563–1567 |
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| 6. |
G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, Yu. A. Kudriavtsev, A. S. Vlasov, T. B. Popova, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1512–1518 ; Semiconductors, 53:11 (2019), 1472–1478 |
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| 7. |
G. S. Gagis, A. S. Vlasov, R. V. Levin, A. E. Marichev, M. P. Scheglov, T. B. Popova, B. Ya. Ber, D. Yu. Kazantsev, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 22–25 ; Tech. Phys. Lett., 45:10 (2019), 1031–1034 |
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| 8. |
A. V. Malevskaya, V. P. Khvostikov, F. Yu. Soldatenkov, O. A. Khvostikova, A. S. Vlasov, V. M. Andreev, “A study of ohmic contacts of power photovoltaic converters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019), 12–15 ; Tech. Phys. Lett., 44:12 (2018), 1198–1200 |
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2018 |
| 9. |
V. P. Khvostikov, V. S. Kalinovskii, S. V. Sorokina, M. Z. Shvarts, N. S. Potapovich, O. A. Khvostikova, A. S. Vlasov, V. M. Andreev, “AlGaAs/GaAs photovoltaic converters of tritium radioluminescent-lamp radiation”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1647–1650 ; Semiconductors, 52:13 (2018), 1754–1757 |
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| 10. |
L. B. Karlina, A. S. Vlasov, I. P. Soshnikov, I. P. Smirnova, B. Ya. Ber, A. B. Smirnov, “Nanostructure growth in the Ga(In)AsP–GaAs system under quasi-equilibrium conditions”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1244–1249 ; Semiconductors, 52:10 (2018), 1363–1368 |
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| 11. |
A. M. Mintairov, J. L. Merz, J. Kapaldo, A. S. Vlasov, S. A. Blundell, “Wigner localization and whispering gallery modes of electrons in quantum dots”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 478 ; Semiconductors, 52:4 (2018), 502–506 |
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| 12. |
D. V. Lebedev, N. A. Kalyuzhnyy, S. A. Mintairov, K. G. Belyaev, M. V. Rakhlin, A. A. Toropov, P. N. Brunkov, A. S. Vlasov, J. Merz, S. Rouvimov, S. Oktyabrsky, M. Yakimov, I. V. Mukhin, A. V. Shelaev, V. A. Bykov, A. Yu. Romanova, P. A. Buryak, A. M. Mintairov, “Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 477 ; Semiconductors, 52:4 (2018), 497–501 |
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2017 |
| 13. |
D. V. Lebedev, A. M. Mintairov, A. S. Vlasov, V. Yu. Davydov, M. M. Kulagina, S. I. Troshkov, A. A. Bogdanov, A. N. Smirnov, A. Gocalinska, G. Juska, E. Pelucchi, J. Kapaldo, S. Rouvimov, J. Merz, “Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures”, Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017), 1066–1070 ; Tech. Phys., 62:7 (2017), 1082–1086 |
| 14. |
A. S. Vlasov, A. B. Sinani, “Model calculating high-speed collisions between bodies with different shapes and massive metallic obstacles”, Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017), 1033–1039 ; Tech. Phys., 62:7 (2017), 1049–1055 |
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| 15. |
L. B. Karlina, A. S. Vlasov, B. Ya. Ber, D. Yu. Kazantsev, N. Kh. Timoshina, M. M. Kulagina, A. B. Smirnov, “Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 699–703 ; Semiconductors, 51:5 (2017), 667–671 |
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| 16. |
A. S. Vlasov, L. B. Karlina, F. E. Komissarenko, A. V. Ankudinov, “Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 611–614 ; Semiconductors, 51:5 (2017), 582–585 |
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2016 |
| 17. |
A. B. Sinani, V. V. Shpeyzman, A. S. Vlasov, E. L. Zilberbrand, A. I. Kozachuk, “High-rate deformation of nanocrystalline iron and copper”, Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016), 70–74 ; Tech. Phys., 61:11 (2016), 1674–1678 |
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