|
This article is cited in 3 scientific papers (total in 3 papers)
A study of ohmic contacts of power photovoltaic converters
A. V. Malevskaya, V. P. Khvostikov, F. Yu. Soldatenkov, O. A. Khvostikova, A. S. Vlasov, V. M. Andreev Ioffe Institute, St. Petersburg
Abstract:
Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-$\mu$m-thick ohmic contacts with electrochemical deposition of gold layers was studied. The effect of deposition modes on the surface morphology of ohmic contacts and their solidity and conductivity was revealed.
Received: 27.09.2018
Citation:
A. V. Malevskaya, V. P. Khvostikov, F. Yu. Soldatenkov, O. A. Khvostikova, A. S. Vlasov, V. M. Andreev, “A study of ohmic contacts of power photovoltaic converters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019), 12–15; Tech. Phys. Lett., 44:12 (2018), 1198–1200
Linking options:
https://www.mathnet.ru/eng/pjtf5575 https://www.mathnet.ru/eng/pjtf/v45/i1/p12
|
Statistics & downloads: |
Abstract page: | 67 | Full-text PDF : | 28 |
|