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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. B. Loginov, R. R. Ismagilov, S. N. Bokova-Sirosh, I. V. Bozh'ev, E. D. Obraztsova, B. A. Loginov, A. N. Obraztsov, “Formation of nanostructured films based on MoS$_{2}$, WS$_{2}$, MoO$_{2}$ and their heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1509–1516   |
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| 2. |
L. A. Fomin, I. V. Malikov, V. A. Berezin, A. È. Rassadin, A. B. Loginov, B. A. Loginov, “Comparison of STM and AFM measurements of Mo thin films with the Kardar–Parisi–Zhang model”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1466–1473 |
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| 3. |
D. V. Ishchenko, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, A. E. Klimov, A. B. Loginov, B. A. Loginov, N. S. Pschin, A. S. Tarasov, E. V. Fedosenko, V. N. Sherstyakova, “Topology of PbSnTe:In layers versus indium concentration”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 1040–1044 ; Tech. Phys., 66:7 (2021), 878–882  |
| 4. |
E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, E. S. Semyonovykh, S. V. Khazanova, S. V. Obolensky, “Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 846–849 ; Semiconductors, 55:12 (2021), 903–906 |
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| 5. |
S. V. Obolensky, E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, “A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 38–41 ; Tech. Phys. Lett., 47:3 (2021), 248–251 |
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2020 |
| 6. |
L. A. Fomin, I. V. Malikov, V. A. Berezin, A. V. Chernykh, A. B. Loginov, B. A. Loginov, “Probe microscopy and electron-transport properties of thin mo epitaxial films on sapphire”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1830–1837 ; Tech. Phys., 65:11 (2020), 1748–1754 |
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2019 |
| 7. |
A. B. Loginov, I. V. Bozh'ev, S. N. Bokova-Sirosh, E. D. Obraztsova, R. R. Ismagilov, B. A. Loginov, A. N. Obraztsov, “Formation of graphene on polycrystalline nickel”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1756–1762 ; Tech. Phys., 64:11 (2019), 1666–1672 |
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