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Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 10, Pages 1509–1516
DOI: https://doi.org/10.21883/JTF.2021.10.51364.102-21
(Mi jtf4920)
 

This article is cited in 7 scientific papers (total in 7 papers)

XXV International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 9--12, 2021
Physics of nanostructures

Formation of nanostructured films based on MoS$_{2}$, WS$_{2}$, MoO$_{2}$ and their heterostructures

A. B. Loginova, R. R. Ismagilova, S. N. Bokova-Siroshb, I. V. Bozh'evac, E. D. Obraztsovab, B. A. Loginovd, A. N. Obraztsovae

a Lomonosov Moscow State University
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
c Quantum Technology Center of M. V. Lomonosov Moscow State University
d National Research University of Electronic Technology
e University of Eastern Finland, Department of Physics and Mathematics, 80101 Joensuu, Finland
Abstract: In this work thin film coatings based on WS$_{2}$, MoS$_{2}$, MoO$_{2}$ and their composites were synthesized, morphological and structural properties of deposited coatings were studied. Chemical vapor deposition with heated MoO$_{3}$, WO$_3$, S powder as precursors was used. Dependence of structural and morphological properties, chemical composition of deposited films on parameters of synthesis was defined. Films of vertically aligned 10 nm thick plate crystals consisting both of pure MoO$_{2}$ and MoO$_{2}$ covered with thin MoS$_{2}$ layer were obtained. Formation of polycrystalline films of regular triangular shaped WS$_{2}$ and uniform continuous 20 nm thick WS$_{2}$ films with covering area of 2 $\times$ 2mm has also been observed. In this work we also report about synthesis of films consisting of regular triangular shaped WS$_{2}$ crystals and MoS$_{2}$ irregularly shaped crystals overlapping each other.
Keywords: 2D materials, transition metal dichalcogenides, heterostructures, CVD, AFM.
Received: 06.04.2021
Revised: 06.04.2021
Accepted: 06.04.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. B. Loginov, R. R. Ismagilov, S. N. Bokova-Sirosh, I. V. Bozh'ev, E. D. Obraztsova, B. A. Loginov, A. N. Obraztsov, “Formation of nanostructured films based on MoS$_{2}$, WS$_{2}$, MoO$_{2}$ and their heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1509–1516
Citation in format AMSBIB
\Bibitem{LogIsmBok21}
\by A.~B.~Loginov, R.~R.~Ismagilov, S.~N.~Bokova-Sirosh, I.~V.~Bozh'ev, E.~D.~Obraztsova, B.~A.~Loginov, A.~N.~Obraztsov
\paper Formation of nanostructured films based on MoS$_{2}$, WS$_{2}$, MoO$_{2}$ and their heterostructures
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 91
\issue 10
\pages 1509--1516
\mathnet{http://mi.mathnet.ru/jtf4920}
\crossref{https://doi.org/10.21883/JTF.2021.10.51364.102-21}
\elib{https://elibrary.ru/item.asp?id=46491205}
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  • https://www.mathnet.ru/eng/jtf/v91/i10/p1509
  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
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