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This article is cited in 2 scientific papers (total in 2 papers)
XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10--13, 2020
Solids
Probe microscopy and electron-transport properties of thin mo epitaxial films on sapphire
L. A. Fomina, I. V. Malikova, V. A. Berezina, A. V. Chernykha, A. B. Loginovb, B. A. Loginovc a Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, Russia
b Lomonosov Moscow State University
c National Research University of Electronic Technology
Abstract:
We have analyzed the surface and electron-transport properties of thin molybdenum epitaxial films. Experimental results are compared with available quantum models of the influence of the film surface relief on their resistance.
Keywords:
epitaxial films, refractory metals, interconnections, rough surface, atomic force microscopy.
Received: 01.04.2020 Revised: 01.04.2020 Accepted: 01.04.2020
Citation:
L. A. Fomin, I. V. Malikov, V. A. Berezin, A. V. Chernykh, A. B. Loginov, B. A. Loginov, “Probe microscopy and electron-transport properties of thin mo epitaxial films on sapphire”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1830–1837; Tech. Phys., 65:11 (2020), 1748–1754
Linking options:
https://www.mathnet.ru/eng/jtf5148 https://www.mathnet.ru/eng/jtf/v90/i11/p1830
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Abstract page: | 45 | Full-text PDF : | 25 |
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