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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. S. Ivanov, D. G. Pavel'ev, S. V. Obolensky, E. S. Obolenskaya, “Radiation hardness of subterahertz radiation source based on heterodyne on Gunn diode generator and superlattice multiplier”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1501–1503   |
| 2. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, E. A. Tarasova, N. V. Vostokov, V. A. Kozlov, S. V. Obolensky, “Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 743–747 ; Semiconductors, 55:10 (2021), 780–784 |
| 3. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolensky, “Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54 ; Tech. Phys. Lett., 47:4 (2021), 305–308 |
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2020 |
| 4. |
D. I. Dyukov, A. G. Fefelov, A. V. Korotkov, D. G. Pavel'ev, V. A. Kozlov, E. S. Obolenskaya, A. S. Ivanov, S. V. Obolensky, “Comparison of the efficiency of promising heterostructure frequency-multiplier diodes of the THz-frequency range”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1158–1162 ; Semiconductors, 54:10 (2020), 1360–1364 |
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2019 |
| 5. |
E. S. Obolenskaya, A. S. Ivanov, D. G. Pavel'ev, V. A. Kozlov, A. P. Vasil'ev, “Comparison of the features of electron transport and subterahertz generation in diodes based on 6-, 18-, 70-, and 120-period GaAs/AlAs superlattices”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1218–1223 ; Semiconductors, 53:9 (2019), 1192–1197 |
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2018 |
| 6. |
D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, E. S. Obolenskaya, “Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1337–1345 ; Semiconductors, 52:11 (2018), 1448–1456 |
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2017 |
| 7. |
D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, E. S. Obolenskaya, S. V. Obolensky, V. M. Ustinov, “Optimization of the superlattice parameters for THz diodes”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1493–1497 ; Semiconductors, 51:11 (2017), 1439–1443 |
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| 8. |
I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1489–1492 ; Semiconductors, 51:11 (2017), 1435–1438 |
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2016 |
| 9. |
E. S. Obolenskaya, E. A. Tarasova, A. Yu. Churin, S. V. Obolensky, V. A. Kozlov, “Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1605–1609 ; Semiconductors, 50:12 (2016), 1579–1583 |
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| 10. |
E. A. Tarasova, E. S. Obolenskaya, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, V. I. Egorkin, A. V. Nezhentsev, A. V. Sakharov, A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, G. V. Medvedev, “Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1599–1604 ; Semiconductors, 50:12 (2016), 1574–1578 |
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| 11. |
D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, Yu. I. Koschurinov, E. S. Obolenskaya, S. V. Obolensky, V. M. Ustinov, “Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1548–1553 ; Semiconductors, 50:11 (2016), 1526–1531 |
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