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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1337–1345
DOI: https://doi.org/10.21883/FTP.2018.11.46595.17 (Mi phts5692) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices

D. G. Pavel'eva, A. P. Vasil'evb, V. A. Kozlovac, E. S. Obolenskayaa

a Lobachevsky State University of Nizhny Novgorod
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (654 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2018.11.46595.17
Abstract: The radiation resistance to the gamma-neutron irradiation ($\sim$1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current–voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.
Keywords: Radiation Resistance, Limiting Operating Frequencies, Quasi-hydrodynamic Approximation, Band Diagram Model, Negative Differential Conductivity.
Funding agency Grant number
Russian Foundation for Basic Research 15-02-07935
Ministry of Education and Science of the Russian Federation 3.3854.2017/4.6
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1448–1456
DOI: https://doi.org/10.1134/S1063782618110192
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, E. S. Obolenskaya, “Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1337–1345; Semiconductors, 52:11 (2018), 1448–1456
Citation in format AMSBIB
\Bibitem{PavVasKoz18}
\by D.~G.~Pavel'ev, A.~P.~Vasil'ev, V.~A.~Kozlov, E.~S.~Obolenskaya
\paper Radiation resistance of terahertz diodes based on GaAs/AlAs superlattices
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1337--1345
\mathnet{http://mi.mathnet.ru/phts5692}
\crossref{https://doi.org/10.21883/FTP.2018.11.46595.17}
\elib{https://elibrary.ru/item.asp?id=36903610}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1448--1456
\crossref{https://doi.org/10.1134/S1063782618110192}
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  • https://www.mathnet.ru/eng/phts/v52/i11/p1337
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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