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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev, “Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 995–1010   |
| 2. |
I. V. Kochman, M. P. Mikhailova, A. I. Veinger, R. V. Parfen'ev, “Magnetophonon oscillations of magnetoresistance in broken-gap InAs/GaS quantum well”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 313–318 |
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2020 |
| 3. |
M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, Yu. P. Yakovlev, P. S. Kop'ev, “Radiative recombination and impact ionization in semiconductor nanostructures (review)”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1267–1288 ; Semiconductors, 54:12 (2020), 1527–1547 |
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2019 |
| 4. |
M. P. Mikhailova, K. D. Moiseev, Yu. P. Yakovlev, “Discovery of III–V semiconductors: physical properties and application”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 291–308 ; Semiconductors, 53:3 (2019), 273–290 |
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| 5. |
M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, R. V. Levin, I. A. Andreev, E. V. Kunitsyna, Yu. P. Yakovlev, “Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 50–54 ; Semiconductors, 53:1 (2019), 46–50 |
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2018 |
| 6. |
M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov, E. V. Ivanov, E. V. Kunitsyna, N. D. Il'inskaya, R. V. Levin, B. V. Pushnii, Yu. P. Yakovlev, “Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 906–911 ; Semiconductors, 52:8 (2018), 1037–1042 |
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2017 |
| 7. |
M. P. Mikhailova, V. A. Berezotets, R. V. Parfen'ev, L. V. Danilov, M. O. Safonchik, A. Hospodková, J. Pangrác, E. Hulicius, “Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1393–1399 ; Semiconductors, 51:10 (2017), 1343–1349 |
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| 8. |
L. V. Danilov, M. P. Mikhailova, I. A. Andreev, G. G. Zegrya, “Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1196–1201 ; Semiconductors, 51:9 (2017), 1148–1152 |
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| 9. |
K. J. Mynbaev, N. L. Bazhenov, A. A. Semakova, M. P. Mikhailova, N. D. Stoyanov, S. S. Kizhaev, S. S. Molchanov, A. P. Astakhova, A. V. Chernyaev, H. Lipsanen, V. E. Bugrov, “Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 247–252 ; Semiconductors, 51:2 (2017), 239–244 |
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2016 |
| 10. |
L. V. Danilov, A. A. Petukhov, M. P. Mikhailova, G. G. Zegrya, È. V. Ivanov, Yu. P. Yakovlev, “Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 794–800 ; Semiconductors, 50:6 (2016), 778–784 |
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2018 |
| 11. |
L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya, “Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 476 ; Semiconductors, 52:4 (2018), 493–496 |
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