Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

Vertical transport in type-II heterojunctions with a two-barrier AlSb/InAs/GaSb/AlSb quantum well (QW) grown by MOVPE on an $n$-InAs (100) substrate is investigated in quantizing magnetic fields up to $B$ = 14 T at low temperatures $T$ = 1.5 and 4.2 K. The width of the QWs is selected from the formation condition of the inverted band structure. Shubnikov–de Haas oscillations are measured at two orientations of the magnetic field (perpendicular and parallel) relative to the structure plane. It is established that conduction in the structure under study is occurs via both three-dimensional (3D) substrate electrons and two-dimensional 2D QW electrons under quantum limit conditions for bulk electrons ($B>$ 5 T). The electron concentrations in the substrate and InAs QW are determined. The $g$-factor for 3D carriers is determined by spin splitting of the zero Landau level. It is shown that the conductance maxima in a magnetic field perpendicular to the structure plane and parallel to the current across the structure in fields $B>$ 9 T correspond to the resonant tunneling of 3D electrons from the emitter substrate into the InAs QW through the 2D electron states of the Landau levels.