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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
P. N. Butenko, L. I. Guzilova, A. V. Chikiryaka, A. I. Pechnikov, V. I. Nikolaev, “Tribological studies of $\alpha$-$\beta$-Ga$_{2}$O$_{3}$ layers paired with a sapphire counterface”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1354–1362   ; Tech. Phys., 66:11 (2021), 1186–1193  |
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| 2. |
A. V. Almaev, V. I. Nikolaev, S. I. Stepanov, N. N. Yakovlev, A. I. Pechnikov, E. V. Chernikov, B. O. Kushnarev, “Effect of ambient humidity on the electrical conductive properties of polymorphic Ga$_{2}$O$_{3}$ structures”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 269–276 ; Semiconductors, 55:3 (2021), 346–353 |
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| 3. |
L. I. Guzilova, A. S. Grashchenko, P. N. Butenko, A. V. Chikiryaka, A. I. Pechnikov, V. I. Nikolaev, “Mechanical properties of epilayers of metastable $\alpha$- and $\varepsilon$-Ga$_{2}$O$_{3}$ phases studied by nanoindentation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 3–7 ; Tech. Phys. Lett., 47:10 (2021), 709–713 |
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2020 |
| 4. |
L. I. Guzilova, B. K. Kardashev, A. I. Pechnikov, V. I. Nikolaev, “Elasticity and inelasticity of bulk GaN crystals”, Zhurnal Tekhnicheskoi Fiziki, 90:1 (2020), 138–142 ; Tech. Phys., 65:1 (2020), 128–132 |
| 5. |
V. I. Nikolaev, A. I. Pechnikov, L. I. Guzilova, A. V. Chikiryaka, M. P. Scheglov, V. V. Nikolaev, S. I. Stepanov, A. A. Vasil’ev, I. V. Shchemerov, A. Ya. Polyakov, “Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 27–29 ; Tech. Phys. Lett., 46:3 (2020), 228–230 |
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2019 |
| 6. |
A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, M. P. Scheglov, M. A. Odnoblyudov, V. I. Nikolaev, “Thick $\alpha$-Ga$_{2}$O$_{3}$ layers on sapphire substrates grown by halide epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 789–792 ; Semiconductors, 53:6 (2019), 780–783 |
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| 7. |
V. I. Nikolaev, A. V. Chikiryaka, L. I. Guzilova, A. I. Pechnikov, “Microhardness and crack resistance of gallium oxide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 51–54 ; Tech. Phys. Lett., 45:11 (2019), 1114–1117 |
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2016 |
| 8. |
S. A. Kukushkin, V. I. Nikolaev, A. V. Osipov, E. V. Osipova, A. I. Pechnikov, N. A. Feoktistov, “Epitaxial gallium oxide on a SiC/Si substrate”, Fizika Tverdogo Tela, 58:9 (2016), 1812–1817 ; Phys. Solid State, 58:9 (2016), 1876–1881 |
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| 9. |
V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, A. N. Smirnov, V. E. Bugrov, A. E. Romanov, P. N. Brunkov, D. A. Kirilenko, “Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 997–1000 ; Semiconductors, 50:7 (2016), 980–983 |
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