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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
Effect of ambient humidity on the electrical conductive properties of polymorphic Ga$_{2}$O$_{3}$ structures
A. V. Almaeva, V. I. Nikolaevbc, S. I. Stepanovbc, N. N. Yakovleva, A. I. Pechnikovb, E. V. Chernikova, B. O. Kushnareva a Tomsk State University, Tomsk, Russia
b Ioffe Institute, St. Petersburg, Russia
c Perfect Crystals LLC, 194064, St. Petersburg, Russia
Abstract:
The effect of ambient humidity on the electrical conductive properties of $\alpha$-Ga$_{2}$O$_{3}$ and $\alpha$-Ga$_{2}$O$_{3}$/$\varepsilon$-Ga$_{2}$O$_{3}$ structures has been studied. Polymorphic Ga$_{2}$O$_{3}$ epitaxial layers were deposited by chloride vapor phase epitaxy on sapphire substrates. Pt and Pt/Ti were used as contacts. It was found that the Pt/$\alpha$-Ga$_{2}$O$_{3}$/Pt and Pt/Ti/$\alpha$-Ga$_{2}$O$_{3}$/$\varepsilon$-Ga$_{2}$O$_{3}$/Ti/Pt structures exhibit a high sensitivity of the current – voltage characteristics (I–V characteristics) to atmospheric humidity in the temperature range 25–100$^{\circ}$C. It was found that the effect of water vapor on the I–V characteristics of the structures is reversible and the most significant changes in the current in the samples are observed at a relative humidity RH $\ge$ 60%. With increasing temperature the effect of atmospheric humidity on the I–V characteristics decreases and disappears at $T>$ 100$^{\circ}$C. The experimental results obtained are explained in terms of the Grottguss mechanism.
Keywords:
$\alpha$-Ga$_{2}$O$_{3}$, $\varepsilon$-Ga$_{2}$O$_{3}$, polymorphic epitaxial films, chloride vapor phase epitaxy, I–V characteristics, atmospheric humidity.
Received: 28.10.2020 Revised: 03.11.2020 Accepted: 03.11.2020
Citation:
A. V. Almaev, V. I. Nikolaev, S. I. Stepanov, N. N. Yakovlev, A. I. Pechnikov, E. V. Chernikov, B. O. Kushnarev, “Effect of ambient humidity on the electrical conductive properties of polymorphic Ga$_{2}$O$_{3}$ structures”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 269–276; Semiconductors, 55:3 (2021), 346–353
Linking options:
https://www.mathnet.ru/eng/phts5069 https://www.mathnet.ru/eng/phts/v55/i3/p269
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