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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
P. A. Ivanov, N. M. Lebedeva, N. D. Il'inskaya, T. P. Samsonova, O. I. Kon'kov, “High-voltage 4$H$-SiC based avalanche diodes with a negative beve”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 349–353   ; Semiconductors, 55:4 (2021), 405–409 |
| 2. |
P. A. Ivanov, N. M. Lebedeva, N. D. Il'inskaya, M. F. Kudoyarov, T. P. Samsonova, O. I. Kon'kov, Yu. M. Zadiranov, “High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 188–194 ; Semiconductors, 55:2 (2021), 243–249 |
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| 3. |
P. A. Ivanov, M. F. Kudoyarov, N. M. Lebedeva, N. D. Il'inskaya, T. P. Samsonova, “High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 48–50 ; Tech. Phys. Lett., 47:3 (2021), 275–277 |
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2020 |
| 4. |
N. M. Lebedeva, T. P. Samsonova, N. D. Il'inskaya, S. I. Troshkov, P. A. Ivanov, “Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask”, Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020), 997–1000 ; Tech. Phys., 65:6 (2020), 957–960 |
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| 5. |
N. D. Il'inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon'kov, A. S. Potapov, “Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 97–102 ; Semiconductors, 54:1 (2020), 144–149 |
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2019 |
| 6. |
P. A. Ivanov, M. F. Kudoyarov, A. S. Potapov, T. P. Samsonova, “Correction of the reverse recovery characteristics of high-voltage 4$H$-SiC junction diodes using proton irradiation”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 862–864 ; Semiconductors, 53:6 (2019), 850–852 |
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| 7. |
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, “Simulation of transient processes in 4$H$-SiC based semiconductor devices (taking into account the incomplete ionization of dopants in the atlas module of the SILVACO TCAD software package)”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 407–410 ; Semiconductors, 53:3 (2019), 385–387 |
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2018 |
| 8. |
P. A. Ivanov, T. P. Samsonova, A. S. Potapov, “Avalanche breakdown stability of high voltage (1430 V) 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1527–1531 ; Semiconductors, 52:12 (2018), 1630–1634 |
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| 9. |
P. A. Ivanov, A. S. Potapov, M. F. Kudoyarov, T. P. Samsonova, “Effect of low-dose proton irradiation on the electrical characteristics of 4$H$-SiC junction diodes”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1187–1190 ; Semiconductors, 52:10 (2018), 1307–1310 |
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| 10. |
P. A. Ivanov, A. S. Potapov, M. F. Kudoyarov, M. A. Kozlovskii, T. P. Samsonova, “The influence of heat treatment on the electrical characteristics of semi-insulating sic layers obtained by irradiating $n$-SiC with high-energy argon ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 11–16 ; Tech. Phys. Lett., 44:3 (2018), 229–231 |
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| 11. |
P. A. Ivanov, O. I. Kon'kov, T. P. Samsonova, A. S. Potapov, “4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 3–8 ; Tech. Phys. Lett., 44:2 (2018), 87–89 |
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2017 |
| 12. |
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Current–voltage characteristics of high-voltage 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes in the avalanche breakdown mode”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 390–394 ; Semiconductors, 51:3 (2017), 374–378 |
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2016 |
| 13. |
P. A. Ivanov, M. F. Kudoyarov, M. A. Kozlovskii, A. S. Potapov, T. P. Samsonova, “Semi-insulating 4$H$-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into $n$-type epitaxial films”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 937–940 ; Semiconductors, 50:7 (2016), 920–923 |
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| 14. |
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 900–904 ; Semiconductors, 50:7 (2016), 883–887 |
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