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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 7, Pages 937–940
(Mi phts6416)
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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Semi-insulating 4$H$-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into $n$-type epitaxial films
P. A. Ivanov, M. F. Kudoyarov, M. A. Kozlovskii, A. S. Potapov, T. P. Samsonova Ioffe Institute, St. Petersburg
Abstract:
It is shown that 9-$\mu$m-thick semi-insulating surface layers can be formed in moderately doped $n$-type silicon carbide (donor concentration 2 $\times$ 10$^{16}$ cm$^{-3}$ via the comparatively low-dose (7 $\times$ 10$^{11}$ cm$^{-2}$) implantation of high-energy (53 MeV) argon ions. The free-carrier removal rate is estimated at $\sim$10$^4$ cm$^{-1}$. The resistivity of the semi-insulator is no less than 7 $\times$ 10$^{12}$ $\Omega$ cm. Analysis of the monopolar current of electron injection into the semi-insulator shows that the impurity-conductivity compensation is due to radiationinduced defects pinning the equilibrium Fermi level at a depth of 1.16 eV below the conduction-band bottom. The density of defect states at the Fermi level is 2.7 $\times$ 10$^{16}$ cm$^{2}$ эВ$^{-1}$.
Received: 16.12.2015 Accepted: 24.12.2015
Citation:
P. A. Ivanov, M. F. Kudoyarov, M. A. Kozlovskii, A. S. Potapov, T. P. Samsonova, “Semi-insulating 4$H$-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into $n$-type epitaxial films”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 937–940; Semiconductors, 50:7 (2016), 920–923
Linking options:
https://www.mathnet.ru/eng/phts6416 https://www.mathnet.ru/eng/phts/v50/i7/p937
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