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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
S. A. Kukushkin, Sh. Sh. Sharofidinov, A. V. Osipov, A. S. Grashchenko, A. V. Kandakov, E. V. Osipova, K. P. Kotlyar, E. V. Ubyivovk, “Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates”, Fizika Tverdogo Tela, 63:3 (2021), 363–369   ; Phys. Solid State, 63:3 (2021), 442–448 |
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| 2. |
A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, A. V. Redkov, “Mechanical properties of a composite SiC coating on graphite obtained by the atomic substitution method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 7–10 |
| 3. |
L. K. Markov, S. A. Kukushkin, I. P. Smirnova, A. S. Pavluchenko, A. S. Grashchenko, A. V. Osipov, G. V. Svyatets, A. E. Nikolaev, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, “A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 3–6 |
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| 4. |
N. A. Cherkashin, A. V. Sakharov, A. E. Nikolaev, V. V. Lundin, S. O. Usov, V. M. Ustinov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, A. F. Tsatsul'nikov, “Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 15–18 ; Tech. Phys. Lett., 47:10 (2021), 753–756 |
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| 5. |
L. I. Guzilova, A. S. Grashchenko, P. N. Butenko, A. V. Chikiryaka, A. I. Pechnikov, V. I. Nikolaev, “Mechanical properties of epilayers of metastable $\alpha$- and $\varepsilon$-Ga$_{2}$O$_{3}$ phases studied by nanoindentation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 3–7 ; Tech. Phys. Lett., 47:10 (2021), 709–713 |
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2020 |
| 6. |
A. S. Grashchenko, A. S. Kukushkin, A. V. Osipov, “Coating of nanostructured profiled Si surface with a SiC layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:20 (2020), 19–22 ; Tech. Phys. Lett., 46:10 (2020), 1012–1015 |
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| 7. |
A. V. Osipov, A. S. Grashchenko, A. N. Gorlyak, A. O. Lebedev, V. V. Luchinin, A. V. Markov, M. F. Panov, S. A. Kukushkin, “Investigation of the hardness and Young's modulus in thin near-surface layers of silicon carbide from the Si- and C-faces by nanoindentation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 36–38 ; Tech. Phys. Lett., 46:8 (2020), 763–766 |
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2019 |
| 8. |
A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, “Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution”, Fizika Tverdogo Tela, 61:12 (2019), 2313–2315 ; Phys. Solid State, 61:12 (2019), 2310–2312 |
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| 9. |
A. V. Redkov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, K. P. Kotlyar, A. I. Lihachev, A. V. Nashchekin, I. P. Soshnikov, “Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution”, Fizika Tverdogo Tela, 61:3 (2019), 433–440 ; Phys. Solid State, 61:3 (2019), 299–306 |
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| 10. |
S. A. Kukushkin, A. M. Mizerov, A. S. Grashchenko, A. V. Osipov, E. V. Nikitina, S. N. Timoshnev, A. D. Bouravlev, M. S. Sobolev, “Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 190–198 ; Semiconductors, 53:2 (2019), 180–187 |
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| 11. |
Sh. Sh. Sharofidinov, S. A. Kukushkin, A. V. Redkov, A. S. Grashchenko, A. V. Osipov, “Growing III–V semiconductor heterostructures on SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 24–27 ; Tech. Phys. Lett., 45:7 (2019), 711–713 |
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2018 |
| 12. |
A. S. Grashchenko, S. A. Kukushkin, V. I. Nikolaev, A. V. Osipov, E. V. Osipova, I. P. Soshnikov, “Study of the anisotropic elastoplastic properties of $\beta$-Ga$_{2}$O$_{3}$ films synthesized on SiC/Si substrates”, Fizika Tverdogo Tela, 60:5 (2018), 851–856 ; Phys. Solid State, 60:5 (2018), 852–857 |
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2017 |
| 13. |
A. S. Grashchenko, N. A. Feoktistov, A. V. Osipov, E. V. Kalinina, S. A. Kukushkin, “Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 651–658 ; Semiconductors, 51:5 (2017), 621–627 |
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