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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 63:4 (2021), 421–426   ; Phys. Solid State, 63:4 (2021), 544–549 |
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| 2. |
D. A. Bauman, L. A. Pyankova, A. V. Kremleva, V. A. Spiridonov, D. Yu. Panov, D. A. Zakgeim, A. S. Bakhvalov, M. A. Odnoblyudov, A. E. Romanov, V. E. Bugrov, “Elemental and structural mapping of Czochralski-grown bulk (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$, crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 19–22 ; Tech. Phys. Lett., 47:3 (2021), 218–221 |
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2020 |
| 3. |
D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, A. M. Smirnov, D. A. Bauman, A. E. Romanov, M. A. Odnoblyudov, V. E. Bugrov, “Volume gallium oxide crystals grown from melt by the Czochralski method in an oxygen-containing atmosphere”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 43–45 ; Tech. Phys. Lett., 46:11 (2020), 1144–1146 |
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2019 |
| 4. |
V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, E. Yu. Lundina, P. N. Brunkov, A. F. Tsatsul'nikov, “Insulating GaN epilayers co-doped with iron and carbon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 36–39 ; Tech. Phys. Lett., 45:7 (2019), 723–726 |
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2018 |
| 5. |
V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, A. E. Nikolaev, P. N. Brunkov, M. A. Yagovkina, A. F. Tsatsul'nikov, “The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 51–58 ; Tech. Phys. Lett., 44:7 (2018), 577–580 |
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2016 |
| 6. |
L. K. Markov, I. P. Smirnova, A. S. Pavluchenko, M. V. Kukushkin, D. A. Zakgeim, S. I. Pavlov, “Technique for forming ITO films with a controlled refractive index”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 1001–1006 ; Semiconductors, 50:7 (2016), 984–988 |
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