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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
V. P. Lesnikov, M. V. Ved, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, I. L. Kalentyeva, A. V. Kudrin, R. N. Kriukov, “Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type”, Fizika Tverdogo Tela, 63:7 (2021), 866–873 ; Phys. Solid State, 63:7 (2021), 1028–1035 |
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M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov, “Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 38–41 |
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2020 |
3. |
M. V. Dorokhin, P. B. Demina, Yu. A. Danilov, O. V. Vikhrova, Yu. M. Kuznetsov, M. V. Ved, F. Iikawa, M. A. G. Balanta, “Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1139–1144 ; Semiconductors, 54:10 (2020), 1341–1346 |
4. |
Yu. A. Danilov, M. V. Ved, O. V. Vikhrova, N. V. Dikareva, M. N. Drozdov, B. N. Zvonkov, V. A. Koval'skii, R. N. Kriukov, A. V. Kudrin, V. P. Lesnikov, P. A. Yunin, A. M. Andreev, “Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 868–872 ; Semiconductors, 54:9 (2020), 1059–1063 |
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M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, D. A. Pavlov, Yu. V. Usov, V. E. Milin, Yu. A. Danilov, “Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020), 17–20 ; Tech. Phys. Lett., 46:7 (2020), 691–694 |
6. |
M. V. Dorokhin, P. B. Demina, E. I. Malysheva, A. V. Kudrin, M. V. Ved, A. V. Zdoroveyshchev, “Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 40–43 ; Tech. Phys. Lett., 46:1 (2020), 87–90 |
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2019 |
7. |
D. S. Prokhorov, V. G. Shengurov, S. A. Denisov, D. O. Filatov, A. V. Zdoroveyshchev, V. Yu. Chalkov, A. V. Zaitsev, M. V. Ved, M. V. Dorokhin, N. A. Baidakova, “Enhanced photoluminescence of heavily doped $n$-Ge/Si(001) layers”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1293–1296 ; Semiconductors, 53:9 (2019), 1262–1265 |
8. |
M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, D. A. Pavlov, Yu. V. Usov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov, “Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019), 33–36 ; Tech. Phys. Lett., 45:7 (2019), 668–671 |
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2018 |
9. |
E. I. Malysheva, M. V. Dorokhin, Yu. A. Danilov, A. E. Parafin, M. V. Ved, A. V. Kudrin, A. V. Zdoroveyshchev, “Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment”, Fizika Tverdogo Tela, 60:11 (2018), 2141–2146 |
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2017 |
10. |
A. V. Kudrin, M. V. Dorokhin, A. V. Zdoroveyshchev, P. B. Demina, O. V. Vikhrova, I. L. Kalentyeva, M. V. Ved, “Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer”, Fizika Tverdogo Tela, 59:11 (2017), 2203–2205 ; Phys. Solid State, 59:11 (2017), 2223–2225 |
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11. |
E. I. Malysheva, M. V. Dorokhin, P. B. Demina, A. V. Zdoroveyshchev, A. V. Rykov, M. V. Ved, Yu. A. Danilov, “Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures”, Fizika Tverdogo Tela, 59:11 (2017), 2142–2147 ; Phys. Solid State, 59:11 (2017), 2162–2167 |
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12. |
M. V. Dorokhin, M. V. Ved, P. B. Demina, A. V. Zdoroveyshchev, A. V. Kudrin, A. V. Rykov, Yu. M. Kuznetsov, “Methods for spin injection managing in InGaAs/GaAs/Al$_{2}$O$_{3}$/CoPt spin light-emitting diodes”, Fizika Tverdogo Tela, 59:11 (2017), 2135–2141 ; Phys. Solid State, 59:11 (2017), 2155–2161 |
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2016 |
13. |
E. I. Malysheva, M. V. Dorokhin, A. V. Zdoroveyshchev, M. V. Ved, “Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/$n^{+}$-GaAs/(Ga,Mn)As”, Fizika Tverdogo Tela, 58:11 (2016), 2190–2194 ; Phys. Solid State, 58:11 (2016), 2271–2276 |
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