|
|
|
Publications in Math-Net.Ru |
Citations |
|
2022 |
| 1. |
I. S. Shashkin, A. D. Rybkin, V. A. Kryuchkov, A. E. Kazakova, D. N. Romanovich, N. A. Rudova, S. O. Slipchenko, N. A. Pikhtin, “Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (<i>λ</i> = 1060 nm) with an ultra-wide emitting aperture (800 μm)”, Kvantovaya Elektronika, 52:9 (2022), 794–798  [Bull. Lebedev Physics Institute, 50:suppl. 1 (2023), S18–S24] |
2
|
| 2. |
S. O. Slipchenko, D. N. Romanovich, V. A. Kapitonov, K. V. Bakhvalov, N. A. Pikhtin, P. S. Kop'ev, “High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture”, Kvantovaya Elektronika, 52:4 (2022), 340–342 [Quantum Electron., 52:4 (2022), 340–342  ] |
3
|
| 3. |
S. O. Slipchenko, D. N. Romanovich, P. S. Gavrina, D. A. Veselov, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, N. A. Pikhtin, “High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures”, Kvantovaya Elektronika, 52:2 (2022), 174–178 [Quantum Electron., 52:2 (2022), 174–178  ] |
3
|
|
2021 |
| 4. |
A. A. Podoskin, P. S. Gavrina, V. S. Golovin, S. O. Slipchenko, D. N. Romanovich, V. A. Kapitonov, I. V. Miroshnikov, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 466–472  |
| 5. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 460–465 ; Semiconductors, 55:5 (2021), 518–523 |
| 6. |
I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, D. N. Romanovich, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 42–45 ; Tech. Phys. Lett., 47:5 (2021), 368–371 |
1
|
| 7. |
T. A. Bagaev, N. V. Gul'tikov, M. A. Ladugin, A. A. Marmalyuk, Yu. V. Kurnyavko, V. V. Krichevskii, A. M. Morozyuk, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. E. Kazakova, D. N. Romanovich, V. A. Kryuchkov, “High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm”, Kvantovaya Elektronika, 51:10 (2021), 912–914 [Quantum Electron., 51:10 (2021), 912–914 ] |
3
|
|
2020 |
| 8. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 484–489 ; Semiconductors, 54:5 (2020), 581–586 |
2
|
| 9. |
S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov, N. A. Pikhtin, “Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 452–457 ; Semiconductors, 54:5 (2020), 529–533 |
2
|
|
2019 |
| 10. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Ñlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 839–843 ; Semiconductors, 53:6 (2019), 828–832 |
5
|
| 11. |
S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov, N. A. Pikhtin, “Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 816–823 ; Semiconductors, 53:6 (2019), 806–813 |
5
|
| 12. |
P. S. Gavrina, O. S. Soboleva, A. A. Podoskin, D. N. Romanovich, V. S. Golovin, S. O. Slipchenko, N. A. Pikhtin, T. A. Bagaev, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov, “Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 7–11 ; Tech. Phys. Lett., 45:4 (2019), 374–378 |
3
|
|
| Organisations |
|
| |
|
|
Contact us: