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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
K. V. Likhachev, A. M. Skomorokhov, M. V. Uchaev, Yu. A. Uspenskaya, V. V. Kozlovsky, M. E. Levinshteĭn, I. A. Eliseyev, A. N. Smirnov, D. D. Kramushchenko, R. A. Babunts, P. G. Baranov, “Локальная диагностика спиновых дефектов в облученных SiC-диодах Шоттки”, Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024), 367–373  |
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2020 |
| 2. |
G. S. Grebenyuk, I. A. Eliseyev, S. P. Lebedev, E. Yu. Lobanova, D. A. Smirnov, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Formation of iron silicides under graphene grown on the silicon carbide surface”, Fizika Tverdogo Tela, 62:10 (2020), 1726–1730  ; Phys. Solid State, 62:10 (2020), 1944–1948 |
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| 3. |
G. S. Grebenyuk, I. A. Eliseyev, S. P. Lebedev, E. Yu. Lobanova, D. A. Smirnov, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide”, Fizika Tverdogo Tela, 62:3 (2020), 462–471 ; Phys. Solid State, 62:3 (2020), 519–528 |
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| 4. |
I. A. Eliseyev, V. Yu. Davydov, E. M. Roginskii, Yu. E. Kitaev, A. N. Smirnov, M. A. Yagovkina, D. V. Nechaev, V. N. Zhmerik, M. V. Smirnov, “Structural and dynamical properties of short-period GaN/AlN superlattices: Experiment and theory”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1397 ; Semiconductors, 54:12 (2020), 1706–1709 |
| 5. |
I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, S. V. Belov, A. V. Zubov, S. P. Lebedev, A. A. Lebedev, “Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1388 ; Semiconductors, 54:12 (2020), 1674–1677 |
| 6. |
A. V. Babichev, S. A. Kadinskaya, K. Yu. Shubina, A. A. Vasil'ev, A. A. Blokhin, È. I. Moiseev, S. A. Blokhin, I. S. Mukhin, I. A. Eliseyev, V. Yu. Davydov, P. N. Brunkov, N. V. Kryzhanovskaya, A. Yu. Egorov, “A study of the photoresponse in graphene produced by chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 833–840 ; Semiconductors, 54:9 (2020), 991–998 |
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2019 |
| 7. |
G. S. Grebenyuk, E. Yu. Lobanova, D. A. Smirnov, I. A. Eliseyev, A. V. Zubov, A. N. Smirnov, S. P. Lebedev, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Cobalt intercalation of graphene on silicon carbide”, Fizika Tverdogo Tela, 61:7 (2019), 1374–1384 ; Phys. Solid State, 61:7 (2019), 1316–1326 |
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| 8. |
S. P. Lebedev, I. S. Barash, I. A. Eliseyev, P. A. Dementev, A. A. Lebedev, P. V. Bulat, “Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1940–1946 ; Tech. Phys., 64:12 (2019), 1843–1849 |
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| 9. |
V. Yu. Davydov, V. N. Jmerik, E. M. Roginskii, Yu. E. Kitaev, Y. M. Beltukov, M. B. Smirnov, D. V. Nechaev, A. N. Smirnov, I. A. Eliseyev, P. N. Brunkov, S. V. Ivanov, “Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1519 ; Semiconductors, 53:11 (2019), 1479–1488 |
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2018 |
| 10. |
M. V. Gomoyunova, G. S. Grebenyuk, V. Yu. Davydov, I. A. Ermakov, I. A. Eliseyev, A. A. Lebedev, S. P. Lebedev, E. Yu. Lobanova, A. N. Smirnov, D. A. Smirnov, I. I. Pronin, “Intercalation of iron atoms under graphene formed on silicon carbide”, Fizika Tverdogo Tela, 60:7 (2018), 1423–1430 ; Phys. Solid State, 60:7 (2018), 1439–1446 |
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| 11. |
S. P. Lebedev, V. Yu. Davydov, D. Yu. Usachov, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, E. V. Gushchina, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, S. N. Novikov, Yu. N. Makarov, “Graphene on silicon carbide as a basis for gas- and biosensor applications”, Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018), 95–97  |
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| 12. |
V. N. Zhmerik, T. V. Shubina, D. V. Nechaev, A. N. Semenov, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseev, G. Posina, S. V. Ivanov, “Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 526 ; Semiconductors, 52:5 (2018), 667–670 |
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2017 |
| 13. |
V. Yu. Davydov, D. Yu. Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, “Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1116–1124 ; Semiconductors, 51:8 (2017), 1072–1080 |
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| 14. |
S. P. Lebedev, I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, V. S. Levitskii, M. G. Mynbaeva, M. M. Kulagina, B. Hähnlein, J. Pezoldt, A. A. Lebedev, “Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 64–72 ; Tech. Phys. Lett., 43:9 (2017), 849–852 |
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2020 |
| 15. |
S. P. Lebedev, I. A. Eliseyev, V. N. Panteleev, P. A. Dementev, V. V. Shnitov, M. K. Rabchinskii, D. A. Smirnov, A. V. Zubov, A. A. Lebedev, “Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1383 ; Semiconductors, 54:12 (2020), 1657–1660 |
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