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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
N. A. Sobolev, A. E. Kalyadin, O. V. Feklisova, E. B. Yakimov, “Effect of compressive and stretching strains on the dislocation luminescence spectrum in silicon”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 550–553   ; Semiconductors, 55:7 (2021), 633–636 |
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2019 |
| 2. |
V. I. Orlov, N. A. Yarykin, E. B. Yakimov, “Effect of nickel and copper introduced at room temperature on the recombination properties of extended defects in silicon”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 433–436 ; Semiconductors, 53:4 (2019), 411–414 |
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| 3. |
S. K. Brantov, E. B. Yakimov, “Thermoresistive semiconductor SiC/Si composite material”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 231–234 ; Semiconductors, 53:2 (2019), 220–223 |
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| 4. |
A. A. Svincov, E. B. Yakimov, M. V. Dorokhin, P. B. Demina, Yu. M. Kuznetsov, “Simulation of the parameters of a titanium-tritide-based beta-voltaic cell”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 101–103 ; Semiconductors, 53:1 (2019), 96–98 |
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| 5. |
S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, V. I. Orlov, O. V. Feklisova, L. A. Pavlova, R. V. Presnyakov, “Dependence of the bulk electrical properties of multisilicon on the grain misorientation parameters”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 59–64 ; Semiconductors, 53:1 (2019), 55–59 |
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2018 |
| 6. |
S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, R. V. Presnyakov, “Electrical activity of extended defects in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 266–271 ; Semiconductors, 52:2 (2018), 254–259 |
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2017 |
| 7. |
T. N. Fursova, V. V. Kedrov, O. G. Rybchenko, S. Z. Shmurak, E. B. Yakimov, A. A. Mazilkin, “Comparative study of the spectral and structural properties of EuAl$_{3}$(BO$_{3}$)$_{4}$ single crystals with different morphologies”, Fizika Tverdogo Tela, 59:12 (2017), 2396–2402 ; Phys. Solid State, 59:12 (2017), 2423–2429 |
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2016 |
| 8. |
S. K. Brantov, A. N. Tereshchenko, E. A. Steinman, E. B. Yakimov, “Physical properties of carbon films obtained by methane pyrolysis in an electric field”, Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016), 110–113 ; Tech. Phys., 61:3 (2016), 428–431 |
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1989 |
| 9. |
G. N. Panin, E. B. Yakimov, “Изменение свойств приповерхностных слоев кристаллов
Cd$_{x}$Hg$_{1-x}$Te под воздействием электронного пучка”, Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1351–1355 |
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1988 |
| 10. |
O. Braitenshtain, O. V. Kononchuk, G. N. Panin, I. Khaidenraikh, E. B. Yakimov, “Исследование теллурида кадмия методом сканирующей спектроскопии
глубоких уровней”, Fizika i Tekhnika Poluprovodnikov, 22:9 (1988), 1687–1688 |
| 11. |
S. V. Koveshnikov, S. V. Nosenko, E. B. Yakimov, “Перестройка радиационных дефектов в Si, стимулированная атомарным
водородом”, Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 922–924 |
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1986 |
| 12. |
V. V. Aristov, P. Verner, I. I. Snigireva, I. I. Khodos, E. B. Yakimov, N. A. Yarykin, “Effect of Annealing on Electron-Microscopic Image and DLTS Spectrum of Dislocations in Deformed Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 907–910 |
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1985 |
| 13. |
A. I. Evstigneev, V. F. Kuleshov, G. A. Lubochkova, M. V. Pashkovskii, E. B. Yakimov, “Effect of Hydrogen on the Concentration
of Centers with Deep Levels in Cd$_{x}$Hg$_{1-x}$Te Crystals”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 915–916 |
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1984 |
| 14. |
V. N. Zagorodnev, N. V. Lichkova, E. B. Yakimov, “Electric properties of superionic conductor $\mathrm{RbAg}_{4}\mathrm{I}_{5}$ doped with $\mathrm{AgS}$”, Fizika Tverdogo Tela, 26:12 (1984), 3672–3673 |
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1983 |
| 15. |
V. G. Eremenko, B. Y. Farber, E. B. Yakimov, “Исследование электрических свойств плотных дислокационных рядов”, Fizika i Tekhnika Poluprovodnikov, 17:7 (1983), 1313–1315 |
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