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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 4, Pages 433–436
DOI: https://doi.org/10.21883/FTP.2019.04.47672.9020 (Mi phts5528) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Effect of nickel and copper introduced at room temperature on the recombination properties of extended defects in silicon

V. I. Orlovab, N. A. Yarykina, E. B. Yakimovac

a Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow region, Russia
b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
c National University of Science and Technology «MISIS», Moscow
Full-text PDF (1348 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2019.04.47672.9020
Abstract: The change in the recombination properties of individual dislocations and dislocation trails in silicon due to the diffusion of nickel and copper during chemical-mechanical polishing at room temperature is studied by the electron-beam- and light-beam-induced current techniques. It is found that the introduction of nickel results in an increase in the recombination activity of both dislocations and dislocation trails. The introduction of copper does not induce any substantial change in the contrast of extended defects.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 075-00475-19
Received: 13.11.2018
Revised: 20.11.2018
Accepted: 20.11.2018
English version:
Semiconductors, 2019, Volume 53, Issue 4, Pages 411–414
DOI: https://doi.org/10.1134/S1063782619040225
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. I. Orlov, N. A. Yarykin, E. B. Yakimov, “Effect of nickel and copper introduced at room temperature on the recombination properties of extended defects in silicon”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 433–436; Semiconductors, 53:4 (2019), 411–414
Citation in format AMSBIB
\Bibitem{OrlYarYak19}
\by V.~I.~Orlov, N.~A.~Yarykin, E.~B.~Yakimov
\paper Effect of nickel and copper introduced at room temperature on the recombination properties of extended defects in silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 4
\pages 433--436
\mathnet{http://mi.mathnet.ru/phts5528}
\crossref{https://doi.org/10.21883/FTP.2019.04.47672.9020}
\elib{https://elibrary.ru/item.asp?id=37644608}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 4
\pages 411--414
\crossref{https://doi.org/10.1134/S1063782619040225}
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  • https://www.mathnet.ru/eng/phts/v53/i4/p433
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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