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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 2, Pages 266–271
DOI: https://doi.org/10.21883/FTP.2018.02.45454.8546 (Mi phts5927) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Manufacturing, processing, testing of materials and structures

Electrical activity of extended defects in multicrystalline silicon

S. M. Peshcherovaa, E. B. Yakimovb, A. I. Nepomnyashchikha, L. A. Pavlovaa, O. V. Feklisovab, R. V. Presnyakova

a Vinogradov Institute of Geochemistry and Analytical Chemistry, Siberian Branch, Russian Academy of Sciences, Irkutsk, Russia
b Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Russia
Full-text PDF (743 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2018.02.45454.8546
Abstract: The excess carrier lifetime $(\tau)$ distribution in multicrystalline silicon grown by the Bridgman technique from high-purity metallurgical silicon (HPMG-Si) is studied. The features of the variation in $\tau$, caused by the grain-boundary structure of ingots, are revealed. The grain boundaries, dislocations, and impurity microinclusions are studied by electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) using selective acid etching. The electrical activity of extended defects is measured by the electronbeam- induced-current (EBIC) method.
Funding agency Grant number
Russian Foundation for Basic Research 16-35-00140-мол_а
Received: 09.02.2017
Accepted: 16.02.2017
English version:
Semiconductors, 2018, Volume 52, Issue 2, Pages 254–259
DOI: https://doi.org/10.1134/S1063782618020124
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova, R. V. Presnyakov, “Electrical activity of extended defects in multicrystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 266–271; Semiconductors, 52:2 (2018), 254–259
Citation in format AMSBIB
\Bibitem{PesYakNep18}
\by S.~M.~Peshcherova, E.~B.~Yakimov, A.~I.~Nepomnyashchikh, L.~A.~Pavlova, O.~V.~Feklisova, R.~V.~Presnyakov
\paper Electrical activity of extended defects in multicrystalline silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 2
\pages 266--271
\mathnet{http://mi.mathnet.ru/phts5927}
\crossref{https://doi.org/10.21883/FTP.2018.02.45454.8546}
\elib{https://elibrary.ru/item.asp?id=32739672}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 2
\pages 254--259
\crossref{https://doi.org/10.1134/S1063782618020124}
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  • https://www.mathnet.ru/eng/phts/v52/i2/p266
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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