Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2, Pages 231–234
DOI: https://doi.org/10.21883/FTP.2019.02.47104.8962 (Mi phts5592) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Thermoresistive semiconductor SiC/Si composite material

S. K. Brantova, E. B. Yakimovb

a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
b Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, Russia
Full-text PDF (220 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2019.02.47104.8962
Abstract: A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.
Received: 18.07.2018
Revised: 27.07.2018
English version:
Semiconductors, 2019, Volume 53, Issue 2, Pages 220–223
DOI: https://doi.org/10.1134/S1063782619020052
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. K. Brantov, E. B. Yakimov, “Thermoresistive semiconductor SiC/Si composite material”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 231–234; Semiconductors, 53:2 (2019), 220–223
Citation in format AMSBIB
\Bibitem{BraYak19}
\by S.~K.~Brantov, E.~B.~Yakimov
\paper Thermoresistive semiconductor SiC/Si composite material
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 2
\pages 231--234
\mathnet{http://mi.mathnet.ru/phts5592}
\crossref{https://doi.org/10.21883/FTP.2019.02.47104.8962}
\elib{https://elibrary.ru/item.asp?id=37476889}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 2
\pages 220--223
\crossref{https://doi.org/10.1134/S1063782619020052}
Linking options:
  • https://www.mathnet.ru/eng/phts5592
  • https://www.mathnet.ru/eng/phts/v53/i2/p231
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:37
    Full-text PDF :9
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024