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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. K. Bakhadyrkhanov, Z. T. Kenzhaev, Kh. S. Turekeev, B. О. Isakov, A. A. Usmonov, “Gettering properties of nickel in silicon photocells”, Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021), 1685–1688   |
| 2. |
M. K. Bakhadyrkhanov, S. B. Isamov, “Physical foundations of the formation of the silicon-based heterovarizonic structure”, Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021), 1678–1684 |
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| 3. |
M. K. Bakhadyrkhanov, Z. T. Kenzhaev, “Optimal conditions for nickel doping to improve the efficiency of silicon photoelectric cells”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 981–986 ; Tech. Phys., 66:7 (2021), 851–856  |
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| 4. |
M. K. Bakhadyrkhanov, S. B. Isamov, N. F. Zikrillaev, M. O. Tursunov, “Anomalous photoelectric phenomena in silicon with nanoclusters of manganese atoms”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 489–492 ; Semiconductors, 55:6 (2021), 542–545 |
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| 5. |
M. K. Bakhadyrkhanov, H. M. Iliev, G. Kh. Mavlonov, Sh. N. Ibodullaev, S. A. Tachilin, “The effect of negative magnetoresistance in silicon to create multifunctional sensors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021), 7–11 ; Tech. Phys. Lett., 48:1 (2022), 1–4 |
| 6. |
M. K. Bakhadyrkhanov, Sh. N. Ibodullaev, N. F. Zikrillaev, S. V. Koveshnikov, “An infrared radiation photoresistor based on silicon with nanoclusters of manganese atoms”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 12–15 ; Tech. Phys. Lett., 47:9 (2021), 641–644 |
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2020 |
| 7. |
M. K. Bakhadyrkhanov, S. B. Isamov, Sh. N. Ibodullaev, S. V. Koveshnikov, N. Norkulov, “Electric field-stimulated photoconductivity in silicon with manganese atom nanoclusters in the range of 3–8 $\mu$m”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 37–40 ; Tech. Phys. Lett., 46:12 (2020), 1192–1195 |
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2019 |
| 8. |
M. K. Bakhadyrkhanov, H. M. Iliev, G. Kh. Mavlonov, K. S. Ayupov, S. B. Isamov, S. A. Tachilin, “Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 421–425 ; Tech. Phys., 64:3 (2019), 385–388 |
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| 9. |
M. K. Bakhadyrkhanov, S. B. Isamov, Z. T. Kenzhaev, S. V. Koveshnikov, “Studying the effect of doping with nickel on silicon-based solar cells with a deep $p$–$n$-junction”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019), 3–6 ; Tech. Phys. Lett., 45:10 (2019), 959–962 |
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2016 |
| 10. |
M. K. Bakhadyrkhanov, S. B. Isamov, “IR photodetectors operating under background illumination”, Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016), 140–142 ; Tech. Phys., 61:3 (2016), 458–460 |
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1992 |
| 11. |
M. K. Bakhadyrkhanov, N. F. Zikrillaev, E. U. Arzikulov, “Низкочастотные колебания тока в компенсированном цинком кремнии”, Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1536–1539 |
| 12. |
M. K. Bakhadyrkhanov, Sh. I. Askarov, B. Z. Sharipov, N. Norkulov, “Влияние плотности атомов диффузанта на коэффициент диффузии
и концентрацию электроактивных атомов серы в кремнии”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:4 (1992), 52–54 |
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1991 |
| 13. |
M. K. Bakhadyrkhanov, M. S. Mirkamilova, V. A. Shustrov, “Определение профиля концентрации марганца и никеля, имплантированных
в кремнии”, Fizika i Tekhnika Poluprovodnikov, 25:11 (1991), 1952–1956 |
| 14. |
M. K. Bakhadyrkhanov, A. Khamidov, Kh. M. Iliev, I. P. Parmankulov, “Возбуждение рекомбинационных волн в кремнии, компенсированном
марганцем при одноосной упругой деформации”, Fizika i Tekhnika Poluprovodnikov, 25:10 (1991), 1731–1736 |
| 15. |
M. K. Bakhadyrkhanov, N. F. Zikrillaev, E. U. Arzikulov, “EFFECT OF ELASTICITY OF DIFFUSANT VAPORS ON CONCENTRATION OF
ELECTROACTIVE ATOMS AND DEGREE OF COMPENSATION OF SI(ZN) MODELS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:12 (1991), 1–4 |
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1990 |
| 16. |
F. M. Talipov, M. K. Bakhadyrkhanov, “Влияние никеля на образование термодоноров в монокристаллах кремния”, Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2202–2203 |
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1989 |
| 17. |
M. K. Bakhadyrkhanov, I. P. Parmankulov, “Неустойчивость тока в кремнии, компенсированном марганцем, связанная
с рекомбинационными волнами”, Fizika i Tekhnika Poluprovodnikov, 23:9 (1989), 1646–1650 |
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1988 |
| 18. |
M. K. Bakhadyrkhanov, A. Abduraimov, X. M. Iliev, “Распад твердого раствора Si$\langle\text{Mn}\rangle$ при всестороннем
гидростатическом сжатии”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 123–128 |
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1987 |
| 19. |
M. K. Bakhadyrkhanov, A. Abduraimov, Kh. M. Iliev, “Effect of Axial Compression on Current–Voltage Characteristics of Manganese-Doped Silicon Diodes”, Fizika i Tekhnika Poluprovodnikov, 21:9 (1987), 1710–1712 |
| 20. |
M. K. Bakhadyrkhanov, Sh. I. Askarov, N. Norkulov, “Some Characteristic Properties of Interaction between Impurity Centers and Deep Donor Levels in Silicon”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1456–1459 |
| 21. |
L. L. Golik, M. M. Gutman, V. E. Pakseev, M. K. Bakhadyrkhanov, N. F. Zikrillaev, A. A. Tursunov, “Dynamic Chaotic State and Hysteresis of Auto-Oscillations in Si$\langle$Mn$\rangle$ due to Temperature-Electric Instability”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1400–1403 |
| 22. |
M. K. Bakhadyrkhanov, Sh. I. Askarov, S. S. Nigmankhodzhaev, K. A. Samigov, B. Z. Sharapov, I. P. Parmankulov, “Auto-Oscillations of Corrent in Sulphur-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1315–1317 |
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1986 |
| 23. |
M. K. Bakhadyrkhanov, A. A. Tursunov, Sh. I. Askarov, N. F. Zikrillaev, A. Abduraimov, Kh. M. Iliev, “Effect of Ellastic Compression in the [100] Direction on the Parameters of ТЕI in Manganese-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1561–1564 |
| 24. |
M. K. Bakhadyrkhanov, Sh. I. Askarov, N. F. Zikrillaev, “Effect of a Magnetic Field on Temperature-Electric Instability in Manganese-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 423–426 |
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1985 |
| 25. |
A. Abduraimov, M. K. Bakhadyrkhanov, Kh. M. Iliev, A. A. Tursunov, “Piezoeffect and Hall Effect in
$p$-Type Si$\langle\text{Mn}\rangle$ under Uniaxial Elastic
Deformation”, Fizika i Tekhnika Poluprovodnikov, 19:11 (1985), 2052–2054 |
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1984 |
| 26. |
M. K. Bakhadyrkhanov, N. F. Zikrillaev, “Низкочастотные колебания тока с большой амплитудой в компенсированном
марганцем кремнии”, Fizika i Tekhnika Poluprovodnikov, 18:12 (1984), 2220–2222 |
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1983 |
| 27. |
M. K. Bakhadyrkhanov, K. A. Azizov, A. A. Tursunov, K. X. Khaidarov, “Влияние $\gamma$-облучения на электрические и фотоэлектрические
свойства компенсированного марганцем кремния”, Fizika i Tekhnika Poluprovodnikov, 17:6 (1983), 973–976 |
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